Abstract
In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode on the nc-PSS is 45% greater than that of a control light emitting diode that was prepared on a flat c-plane sapphire substrate (f-SS) wafer. The GaN-based light emitting diode that was prepared on the nc-PSS exhibited much less drooping than a GaN-based light-emitting diode that was prepared on a commercial semi-sphere patterned sapphire substrate (r-PSS), mainly because the voids that formed at the cavities at the GaN/nc-PSS interface buffered the stress in the GaN epi-layers that was imposed by the sapphire substrate.
Original language | English |
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Pages (from-to) | 127-131 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 628 |
DOIs | |
State | Published - 30 Apr 2017 |
Keywords
- Gallium nitride
- Light emitting diodes
- Nano-cavities
- Quantum wells