Fabrication of nano-cavity patterned sapphire substrate using self-assembly meshed Pt thin film on c-plane sapphire substrate

S. W. Huang, C. C. Chang, H. Y. Lin, X. F. Li, Y. C. Lin, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode on the nc-PSS is 45% greater than that of a control light emitting diode that was prepared on a flat c-plane sapphire substrate (f-SS) wafer. The GaN-based light emitting diode that was prepared on the nc-PSS exhibited much less drooping than a GaN-based light-emitting diode that was prepared on a commercial semi-sphere patterned sapphire substrate (r-PSS), mainly because the voids that formed at the cavities at the GaN/nc-PSS interface buffered the stress in the GaN epi-layers that was imposed by the sapphire substrate.

Original languageEnglish
Pages (from-to)127-131
Number of pages5
JournalThin Solid Films
Volume628
DOIs
StatePublished - 30 Apr 2017

Keywords

  • Gallium nitride
  • Light emitting diodes
  • Nano-cavities
  • Quantum wells

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