Fabrication of low-stress Si Nx Hy membranes deposited by PECVD

J. Y. Chen, Y. M. Liao, C. C. Lee, G. C. Chi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Si Nx films deposited on silicon in a plasma-enhanced chemical vapor deposition (PECVD) reactor from a mixture gas of Si H4 and N H3 are investigated as an alternative method for low-stress membrane fabrication. We verified that the stress in the silicon nitride films decreased as a function of deposition pressure. A low tensile stress in the film of 170 MPa was obtained at a pressure of 750 mTorr and the refractive index of the film was 1.8. After KOH wet etching from the back side of the silicon substrate, a flat square (5×5 mm) membrane with thickness of 500 nm could be successfully fabricated. The chemical composition of the film was analyzed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy, with lower deposition pressures producing less Si-H bonding.

Original languageEnglish
Pages (from-to)D227-D229
JournalJournal of the Electrochemical Society
Volume154
Issue number4
DOIs
StatePublished - 2007

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