Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

C. F. Lo, F. Ren, C. Y. Chang, S. J. Pearton, S. H. Chen, C. M. Chang, S. Y. Wang, J. I. Chyi, I. I. Kravchenko

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A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52 Al0.48As/ In0.42 Ga 0.58 As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/ cm2 and a high dc current gain of 123.8 for a DHBT with a 0.65×8.65 μ m2 emitter area were obtained. A unity gain cutoff frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC =302 kA/ cm2 were achieved.

Original languageEnglish
Article number031205
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number3
StatePublished - May 2011


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