Fabrication of highly c-axis textured ZnO thin films piezoelectric transducers by RF sputtering

Min Chun Pan, Tzon Han Wu, Tuan Anh Bui, Wen Ching Shih

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


The influence of fabrication parameters on ZnO film properties has been analyzed through conducting several experiment processes to develop an appropriate deposition condition for obtaining highly c-axis textured films. A transducer with the structure of Al/ZnO/Al/Si was fabricated at low deposition rate and under a temperature of 380 °C in a mixture of gases Ar:O 2 = 1:3, and RF power of 178 W. Pt/Ti was employed as the bottom electrode of the transducer fabricated in a suitable substrate temperature, which starts increasing at 380 °C with an increment of 20 °C for each 2 h stage of the deposition. Highly c-axis textured ZnO films have been successfully deposited on Pt/Ti/SiO 2/Si substrate under feasible conditions, including RF power of 178 W, substrate temperature of 380 °C, deposition pressure of 1.3 Pa and Ar:O 2 gas flow ratio of 50%. These conditions have been proposed and confirmed through investigating the influences of the sputtering parameters, such as substrate temperature, RF power and Ar:O 2 gas flow ratio, on the properties of ZnO films.

Original languageEnglish
Pages (from-to)418-424
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Issue number2
StatePublished - Feb 2012


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