Fabrication of gallium nitride waveguide resonators by high-power impulse magnetron sputtering at room temperature

Shih Hsin Wu, Zhi Guang Chen, Hung Sheng Liu, Sheng Hui Chen, Pei Hsun Wang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this work, we demonstrate gallium nitride (GaN) waveguide resonators by sputtering amorphous GaN films on the silicon-based substrate. With the aid of high-power impulse magnetron sputtering (HiPIMS), high-quality, high-deposition-rate, and high-flatness GaN films can be deposited directly onto the silicon substrate with a 4 μm buried oxide layer at room temperature. Waveguide resonators with a quality factor of up to 4 × 104 are demonstrated, and closely critical coupling is achieved at a 0.2 μm gap by optimizing the gap sizes, showing a high extinction ratio of waveguide resonators at ≈24 dB. The fabrication process of HiPIMS-GaN waveguide resonators utilizes CMOS-compatible techniques and operates at a low thermal budget. Compared to conventional GaN films fabricated using metal-organic chemical vapor deposition, this study offers the potential to produce low-cost GaN waveguides on amorphous substrates and realize integrated GaN photonics in optical communication, nonlinear photonics, and quantum photonics by high-quality HiPIMS films.

Original languageEnglish
Article number016106
JournalAPL Photonics
Volume9
Issue number1
DOIs
StatePublished - 1 Jan 2024

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