Fabrication of double-metal AC-coupled silicon microstrip detectors

Wen Chin Tsay; Yen Ann Chen; Li Hong Laih; Jyh Wong Hong; Augustine E. Chen; Willis T. Lin; Yuan Hann Chang; Suen R. Hou; Chung Ren Li; Hsien Jen Ting; Wei Chen Liang; Jyh Dong Tang; Caleb C.P. Cheng; Song Tsang Chiang

doi:10.1016/S0168-9002(97)01196-0

Fabrication of double-metal AC-coupled silicon microstrip detectors

Wen Chin Tsay, Yen Ann Chen, Li Hong Laih, Jyh Wong Hong, Augustine E. Chen, Willis T. Lin, Yuan Hann Chang, Suen R. Hou, Chung Ren Li, Hsien Jen Ting, Wei Chen Liang, Jyh Dong Tang, Caleb C.P. Cheng, Song Tsang Chiang

Research output: Contribution to journal › Article › peer-review

Abstract

The 8 x 4 cm² single-sided double-metal p⁺ i n⁺ silicon microstrip detectors (SMDs) with coupling capacitors and polysilicon bias resistors were fabricated with the newly developed double-metal processing techniques with different inter-metal dielectrics. The results of using these processing techniques and some features of double-metal process are reported. The characteristics of polysilicon bias resistors obtained with BF₂ ion-implantations having various doses and their effects on the leakage currents of SMDs have also been studied.

Original language	English
Pages (from-to)	13-19
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	405
Issue number	1
DOIs	https://doi.org/10.1016/S0168-9002(97)01196-0
State	Published - 1 Mar 1998

Keywords

Double-metal
IMD (inter-metal dielectric)
ONO (oxide nitride-oxide)
PECVD (plasma-enhanced chemical vapor deposition)
SMD (silicon microstrip detector)
SOG (spin-on-glass)

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10.1016/S0168-9002(97)01196-0

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Tsay, W. C., Chen, Y. A., Laih, L. H., Hong, J. W., Chen, A. E., Lin, W. T., Chang, Y. H., Hou, S. R., Li, C. R., Ting, H. J., Liang, W. C., Tang, J. D., Cheng, C. C. P., & Chiang, S. T. (1998). Fabrication of double-metal AC-coupled silicon microstrip detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 405(1), 13-19. https://doi.org/10.1016/S0168-9002(97)01196-0

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title = "Fabrication of double-metal AC-coupled silicon microstrip detectors",

abstract = "The 8 x 4 cm2 single-sided double-metal p+ i n+ silicon microstrip detectors (SMDs) with coupling capacitors and polysilicon bias resistors were fabricated with the newly developed double-metal processing techniques with different inter-metal dielectrics. The results of using these processing techniques and some features of double-metal process are reported. The characteristics of polysilicon bias resistors obtained with BF2 ion-implantations having various doses and their effects on the leakage currents of SMDs have also been studied.",

keywords = "Double-metal, IMD (inter-metal dielectric), ONO (oxide nitride-oxide), PECVD (plasma-enhanced chemical vapor deposition), SMD (silicon microstrip detector), SOG (spin-on-glass)",

author = "Tsay, {Wen Chin} and Chen, {Yen Ann} and Laih, {Li Hong} and Hong, {Jyh Wong} and Chen, {Augustine E.} and Lin, {Willis T.} and Chang, {Yuan Hann} and Hou, {Suen R.} and Li, {Chung Ren} and Ting, {Hsien Jen} and Liang, {Wei Chen} and Tang, {Jyh Dong} and Cheng, {Caleb C.P.} and Chiang, {Song Tsang}",

note = "Funding Information: *Corresponding author. Tel.: f88h 3 4227151; +X66 3 41XGO; e-mall: mtchest i($mslR.hinet.net. {\textquoteright} This work was supported by I\iational Science Council of R.O.C. under the contracts NSC ~3-COOS-M-008-047 and NSC x5-2 1 I?-hl-ttox-021,",

year = "1998",

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day = "1",

doi = "10.1016/S0168-9002(97)01196-0",

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volume = "405",

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Tsay, WC, Chen, YA, Laih, LH, Hong, JW, Chen, AE , Lin, WT , Chang, YH, Hou, SR, Li, CR, Ting, HJ, Liang, WC, Tang, JD, Cheng, CCP & Chiang, ST 1998, 'Fabrication of double-metal AC-coupled silicon microstrip detectors', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 405, no. 1, pp. 13-19. https://doi.org/10.1016/S0168-9002(97)01196-0

TY - JOUR

T1 - Fabrication of double-metal AC-coupled silicon microstrip detectors

AU - Tsay, Wen Chin

AU - Chen, Yen Ann

AU - Laih, Li Hong

AU - Hong, Jyh Wong

AU - Chen, Augustine E.

AU - Lin, Willis T.

AU - Chang, Yuan Hann

AU - Hou, Suen R.

AU - Li, Chung Ren

AU - Ting, Hsien Jen

AU - Liang, Wei Chen

AU - Tang, Jyh Dong

AU - Cheng, Caleb C.P.

AU - Chiang, Song Tsang

N1 - Funding Information: *Corresponding author. Tel.: f88h 3 4227151; +X66 3 41XGO; e-mall: mtchest i($mslR.hinet.net. ’ This work was supported by I\iational Science Council of R.O.C. under the contracts NSC ~3-COOS-M-008-047 and NSC x5-2 1 I?-hl-ttox-021,

PY - 1998/3/1

Y1 - 1998/3/1

N2 - The 8 x 4 cm2 single-sided double-metal p+ i n+ silicon microstrip detectors (SMDs) with coupling capacitors and polysilicon bias resistors were fabricated with the newly developed double-metal processing techniques with different inter-metal dielectrics. The results of using these processing techniques and some features of double-metal process are reported. The characteristics of polysilicon bias resistors obtained with BF2 ion-implantations having various doses and their effects on the leakage currents of SMDs have also been studied.

AB - The 8 x 4 cm2 single-sided double-metal p+ i n+ silicon microstrip detectors (SMDs) with coupling capacitors and polysilicon bias resistors were fabricated with the newly developed double-metal processing techniques with different inter-metal dielectrics. The results of using these processing techniques and some features of double-metal process are reported. The characteristics of polysilicon bias resistors obtained with BF2 ion-implantations having various doses and their effects on the leakage currents of SMDs have also been studied.

KW - Double-metal

KW - IMD (inter-metal dielectric)

KW - ONO (oxide nitride-oxide)

KW - PECVD (plasma-enhanced chemical vapor deposition)

KW - SMD (silicon microstrip detector)

KW - SOG (spin-on-glass)

UR - http://www.scopus.com/inward/record.url?scp=0032024012&partnerID=8YFLogxK

U2 - 10.1016/S0168-9002(97)01196-0

DO - 10.1016/S0168-9002(97)01196-0

M3 - 期刊論文

AN - SCOPUS:0032024012

SN - 0168-9002

VL - 405

SP - 13

EP - 19

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Fabrication of double-metal AC-coupled silicon microstrip detectors

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Keywords

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