Fabrication of double-metal AC-coupled silicon microstrip detectors

Wen Chin Tsay, Yen Ann Chen, Li Hong Laih, Jyh Wong Hong, Augustine E. Chen, Willis T. Lin, Yuan Hann Chang, Suen R. Hou, Chung Ren Li, Hsien Jen Ting, Wei Chen Liang, Jyh Dong Tang, Caleb C.P. Cheng, Song Tsang Chiang

Research output: Contribution to journalArticlepeer-review


The 8 x 4 cm2 single-sided double-metal p+ i n+ silicon microstrip detectors (SMDs) with coupling capacitors and polysilicon bias resistors were fabricated with the newly developed double-metal processing techniques with different inter-metal dielectrics. The results of using these processing techniques and some features of double-metal process are reported. The characteristics of polysilicon bias resistors obtained with BF2 ion-implantations having various doses and their effects on the leakage currents of SMDs have also been studied.

Original languageEnglish
Pages (from-to)13-19
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1
StatePublished - 1 Mar 1998


  • Double-metal
  • IMD (inter-metal dielectric)
  • ONO (oxide nitride-oxide)
  • PECVD (plasma-enhanced chemical vapor deposition)
  • SMD (silicon microstrip detector)
  • SOG (spin-on-glass)


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