Fabrication of a nanoscale single-crystalline silicon thin film on insulator

T. H. Lee, C. H. Huang, Y. Y. Yang, P. W. Li, T. Suryasindhu, S. Lee

Research output: Contribution to journalArticlepeer-review


One-dimensional nanostructure materials on a desired substrate were fabricated by a hydrogen ion-exfoliation-based wafer bonding approach integrated with a sacrificial layer. The nanoscale defining thickness is exactly achieved by the employment of polysilicon as a sacrificial layer. The hydrogen implanted device wafer was bonded to a Pyrex 7740 wafer and then the polysilicon-oxide- silicon sandwich structure layer was exfoliated and transferred onto the Pyrex wafer by a thermal-microwave hybrid method. The thickness of the transferred single-crystal silicon layer was measured at 100 nm by transmission electron microscopy.

Original languageEnglish
Pages (from-to)K17-K19
JournalElectrochemical and Solid-State Letters
Issue number7
StatePublished - 2007


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