Fabrication of a nanoscale single-crystalline silicon thin film on insulator

One-dimensional nanostructure materials on a desired substrate were fabricated by a hydrogen ion-exfoliation-based wafer bonding approach integrated with a sacrificial layer. The nanoscale defining thickness is exactly achieved by the employment of polysilicon as a sacrificial layer. The hydrogen implanted device wafer was bonded to a Pyrex 7740 wafer and then the polysilicon-oxide- silicon sandwich structure layer was exfoliated and transferred onto the Pyrex wafer by a thermal-microwave hybrid method. The thickness of the transferred single-crystal silicon layer was measured at 100 nm by transmission electron microscopy.