Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature

P. W. Li, W. M. Liao, David M.T. Kuo, S. W. Lin, P. S. Chen, S. C. Lu, M. J. Tsai

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Abstract

The fabrication of a germanium quantum-dot (QD) single-electron transistor using complementary metal-oxide-semiconductor-compatible method was proposed. The tunneling currents through the Ge QD were simulated by the Anderson model with two energy levels. The total capacitance of the dot was calculated to be 2.13 aF. The analysis of the current-voltage characteristics indicated that the single-electron addition energy of the Ge QD was about 125 meV.

Original languageEnglish
Pages (from-to)1532-1534
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number9
DOIs
StatePublished - 30 Aug 2004

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