Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography

Engineering & Materials Science

• Photolithography 100%
• High electron mobility transistors 92%
• Cutoff frequency 92%
• Fabrication 59%
• Passivation 48%
• Transconductance 47%
• Etching 42%
• Substrates 28%

Chemical Compounds

• Electron Mobility 95%
• Current Gain 70%
• Transconductance 61%
• Fluorescence Maxima 52%
• Chemical Passivation 40%
• Etching 35%
• Length 23%
• Surface 12%

Physics & Astronomy

• high electron mobility transistors 82%
• lithography 66%
• fabrication 48%
• cut-off 33%
• power gain 26%
• transconductance 21%
• spacers 20%
• passivity 18%
• etching 15%
• traps 14%