Fabrication of 0.25 μm T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography

Yi Zhen Liu, Wei Chih Ho, Indraneel Sanyal, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this report, we demonstrate an optical lithography process to fabricate T-gate AlInGaN/AlN/GaN high electron mobility transistors (HEMTs) on Si substrates with gate length down to 0.25 μm. The gate foot is defined by backfilling and etching a SiNx layer with a 0.6 μm wide window. The backfilled SiNx layer serves not only as the spacer layer that results in a reduced gate foot, but also as a passivation layer for reducing surface trap states. The fabricated AIInGaN/AlN/GaN HEMTs exhibit IDSS of 537 mA/mm, transconductance of 439 mS/mm, current gain cut-off frequency (fT) of 58 GHz, and power gain cut-off frequency (fmax) of 73 GHz.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
DOIs
StatePublished - May 2019
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: 19 May 201923 May 2019

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
Country/TerritoryJapan
CityNara
Period19/05/1923/05/19

Keywords

  • AlInGaN
  • GaN
  • HEMT
  • Optical lithography

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