Fabrication and characterization of a germanium quantum-dot transistor formed by selective oxidation of SiGe/Si-on-insulator

W. M. Liao; S. W. Lin; S. S. Tseng; C. K. Lin; M. T. Kuo; P. W. Li

Fabrication and characterization of a germanium quantum-dot transistor formed by selective oxidation of SiGe/Si-on-insulator

W. M. Liao, S. W. Lin, S. S. Tseng, C. K. Lin, M. T. Kuo, P. W. Li

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A simple and CMOS-compatible fabrication method for germanium (Ge) single-electron transistors (SET's) is proposed, in which the Ge quantum dots (QDs) are naturally formed by selective oxidation of Si_0.95Ge _0.0.5/Si wires on a silicon-on-insulator substrate. Clear Coulomb-blockade oscillations, Coulomb staircase, and negative differential conductances are experimentally observed at room temperature. The current-voltage characteristics of Ge SET's indicate that the addition energy of Ge QDs is about 130 meV and the Ge QD's diameter is about 7.7 nm, which agrees well with the transmission electron microscopy observation and numerical calculation.

Original language	English
Pages (from-to)	11-16
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	808
State	Published - 2004
Event	Amorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States Duration: 13 Apr 2004 → 16 Apr 2004

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title = "Fabrication and characterization of a germanium quantum-dot transistor formed by selective oxidation of SiGe/Si-on-insulator",

abstract = "A simple and CMOS-compatible fabrication method for germanium (Ge) single-electron transistors (SET's) is proposed, in which the Ge quantum dots (QDs) are naturally formed by selective oxidation of Si0.95Ge 0.0.5/Si wires on a silicon-on-insulator substrate. Clear Coulomb-blockade oscillations, Coulomb staircase, and negative differential conductances are experimentally observed at room temperature. The current-voltage characteristics of Ge SET's indicate that the addition energy of Ge QDs is about 130 meV and the Ge QD's diameter is about 7.7 nm, which agrees well with the transmission electron microscopy observation and numerical calculation.",

author = "Liao, {W. M.} and Lin, {S. W.} and Tseng, {S. S.} and Lin, {C. K.} and Kuo, {M. T.} and Li, {P. W.}",

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TY - JOUR

T1 - Fabrication and characterization of a germanium quantum-dot transistor formed by selective oxidation of SiGe/Si-on-insulator

AU - Liao, W. M.

AU - Lin, S. W.

AU - Tseng, S. S.

AU - Lin, C. K.

AU - Kuo, M. T.

AU - Li, P. W.

PY - 2004

Y1 - 2004

N2 - A simple and CMOS-compatible fabrication method for germanium (Ge) single-electron transistors (SET's) is proposed, in which the Ge quantum dots (QDs) are naturally formed by selective oxidation of Si0.95Ge 0.0.5/Si wires on a silicon-on-insulator substrate. Clear Coulomb-blockade oscillations, Coulomb staircase, and negative differential conductances are experimentally observed at room temperature. The current-voltage characteristics of Ge SET's indicate that the addition energy of Ge QDs is about 130 meV and the Ge QD's diameter is about 7.7 nm, which agrees well with the transmission electron microscopy observation and numerical calculation.

AB - A simple and CMOS-compatible fabrication method for germanium (Ge) single-electron transistors (SET's) is proposed, in which the Ge quantum dots (QDs) are naturally formed by selective oxidation of Si0.95Ge 0.0.5/Si wires on a silicon-on-insulator substrate. Clear Coulomb-blockade oscillations, Coulomb staircase, and negative differential conductances are experimentally observed at room temperature. The current-voltage characteristics of Ge SET's indicate that the addition energy of Ge QDs is about 130 meV and the Ge QD's diameter is about 7.7 nm, which agrees well with the transmission electron microscopy observation and numerical calculation.

UR - http://www.scopus.com/inward/record.url?scp=12744271532&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:12744271532

SN - 0272-9172

VL - 808

SP - 11

EP - 16

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Amorphous and Nanocrystalline Silicon Science and Technology - 2004

Y2 - 13 April 2004 through 16 April 2004

ER -

Fabrication and characterization of a germanium quantum-dot transistor formed by selective oxidation of SiGe/Si-on-insulator

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