Extraction of Ga(III) by Di-(2-ethylhexyl)phosphoric acid (D2EHPA)-Modified XAD-4 Resins Prepared by Solvent-Nonsolvent Modification

Jyh Herng Chen, Yu Hao Chang, Kai Chung Hsu, Jing Chie Lin

Research output: Contribution to journalArticlepeer-review

Abstract

Gallium (Ga) is one of the most important elements that are widely used in electronic devices. The development of Ga recovery technology is an important issue for resource recycling. In this study, di-(2-ethylhexyl)phosphoric acid (D2EHPA)-modified XAD-4 resin (DMR) is prepared by the solvent-nonsolvent method. The evolution of pore characteristics demonstrates that the solvent-nonsolvent treatment is advantageous for the immobilization of D2EHPA in XAD-4 resin. The adsorption isotherm of Ga(III) can be described by the Langmuir isotherm model. The Ga(III) adsorption kinetics follows the pseudo-second-order model. The immobilized D2EHPA shows good stability. The reusability study indicates that DMR can maintain the performance after three cycles of adsorption and stripping. The results for the treatment of a practical leaching solution from GaN/Al2O3 wafer further demonstrate that DMR can be applied effectively for Ga(III) recovery.

Original languageEnglish
Pages (from-to)2257-2268
Number of pages12
JournalChemical Engineering and Technology
Volume44
Issue number12
DOIs
StatePublished - Dec 2021

Keywords

  • D2EHPA
  • Gallium recovery
  • Selective separation
  • Solvent-nonsolvent

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