Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory

E. R. Hsieh; H. T. Wang; Steve S. Chung; Wayne Chang; S. D. Wang; C. H. Chen

doi:10.1109/IPFA.2016.7564243

Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory

E. R. Hsieh, H. T. Wang, Steve S. Chung, Wayne Chang, S. D. Wang, C. H. Chen

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The endurance and charge loss are the most critical issue in the design of a SONOS memory cell. The origin of the window closure and charge loss was partly caused by the electrons and holes mismatch along the channel lateral direction during the cycling. In this paper, two measurement techniques to observe the mismatch of programmed electrons and erased holes have been developed. It was demonstrated on an MTP (Multi-Time-Programming) SONOS flash memory. By observing the charge distribution, the mismatch which led to window closure and charge loss can be well understood, and better operating schemes can then be developed.

Original language	English
Title of host publication	Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	38-42
Number of pages	5
ISBN (Electronic)	9781467382588
DOIs	https://doi.org/10.1109/IPFA.2016.7564243
State	Published - 9 Sep 2016
Event	23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 - Singapore, Singapore Duration: 18 Jul 2016 → 21 Jul 2016

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2016-September

Conference

Conference	23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
Country/Territory	Singapore
City	Singapore
Period	18/07/16 → 21/07/16

Keywords

Random Telegraph Noise (RTN)
SONOS flash memory
charge loss
endurance
gated-diode measurement
retention

Access to Document

10.1109/IPFA.2016.7564243

Cite this

Hsieh, E. R., Wang, H. T., Chung, S. S., Chang, W., Wang, S. D., & Chen, C. H. (2016). Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory. In Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 (pp. 38-42). Article 7564243 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2016.7564243

Hsieh, E. R. ; Wang, H. T. ; Chung, Steve S. et al. / Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory. Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 38-42 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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abstract = "The endurance and charge loss are the most critical issue in the design of a SONOS memory cell. The origin of the window closure and charge loss was partly caused by the electrons and holes mismatch along the channel lateral direction during the cycling. In this paper, two measurement techniques to observe the mismatch of programmed electrons and erased holes have been developed. It was demonstrated on an MTP (Multi-Time-Programming) SONOS flash memory. By observing the charge distribution, the mismatch which led to window closure and charge loss can be well understood, and better operating schemes can then be developed.",

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Hsieh, ER, Wang, HT, Chung, SS, Chang, W, Wang, SD & Chen, CH 2016, Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory. in Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016., 7564243, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. 38-42, 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016, Singapore, Singapore, 18/07/16. https://doi.org/10.1109/IPFA.2016.7564243

Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory. / Hsieh, E. R.; Wang, H. T.; Chung, Steve S. et al.
Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 38-42 7564243 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The endurance and charge loss are the most critical issue in the design of a SONOS memory cell. The origin of the window closure and charge loss was partly caused by the electrons and holes mismatch along the channel lateral direction during the cycling. In this paper, two measurement techniques to observe the mismatch of programmed electrons and erased holes have been developed. It was demonstrated on an MTP (Multi-Time-Programming) SONOS flash memory. By observing the charge distribution, the mismatch which led to window closure and charge loss can be well understood, and better operating schemes can then be developed.

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Hsieh ER, Wang HT, Chung SS, Chang W, Wang SD, Chen CH. Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory. In Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 38-42. 7564243. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2016.7564243

Experimental techniques on the understanding of the charge loss in a SONOS nitride-storage nonvolatile memory

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