Experimental I-V characteristics of AIGaAs/GaAs heterojunction bipolar transistors with very thin bases

Y. M. Hsin; D. P. Vu; P. M. Asbeck

doi:10.1049/el:19960853

Experimental I-V characteristics of AIGaAs/GaAs heterojunction bipolar transistors with very thin bases

Y. M. Hsin, D. P. Vu, P. M. Asbeck

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4 Scopus citations

Abstract

Npn abrupt AlGaAs/GaAs heterojunction bipolar transistors with thin base widths (W_B) down to 200Å have been fabricated for the first time, and their collector and base current-voltage characteristics have been studied. The experimental results show that the surface recombination base current and the base bulk recombination current are both significantly lower in 200Å base HBTs than in comparable devices with 500Å base width. For the thin base HBTS, the base bulk recombination current density is proportional to ~∼W_B and the surface recombination current density is proportional to ∼W_B². The experiment also showed that the collector current across a thin p⁺ GaAs base is limited, as expected, by the thermal velocity of the electrons rather than by conventional diffusive transport.

Original language	English
Pages (from-to)	1323-1324
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	14
DOIs	https://doi.org/10.1049/el:19960853
State	Published - 4 Jul 1996

Keywords

Aluminium gallium arsenide
Gallium arsenide
Heterojunction bipolar transistors

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title = "Experimental I-V characteristics of AIGaAs/GaAs heterojunction bipolar transistors with very thin bases",

abstract = "Npn abrupt AlGaAs/GaAs heterojunction bipolar transistors with thin base widths (WB) down to 200{\AA} have been fabricated for the first time, and their collector and base current-voltage characteristics have been studied. The experimental results show that the surface recombination base current and the base bulk recombination current are both significantly lower in 200{\AA} base HBTs than in comparable devices with 500{\AA} base width. For the thin base HBTS, the base bulk recombination current density is proportional to ~∼WB and the surface recombination current density is proportional to ∼WB2. The experiment also showed that the collector current across a thin p+ GaAs base is limited, as expected, by the thermal velocity of the electrons rather than by conventional diffusive transport.",

keywords = "Aluminium gallium arsenide, Gallium arsenide, Heterojunction bipolar transistors",

author = "Hsin, {Y. M.} and Vu, {D. P.} and Asbeck, {P. M.}",

year = "1996",

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volume = "32",

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TY - JOUR

T1 - Experimental I-V characteristics of AIGaAs/GaAs heterojunction bipolar transistors with very thin bases

AU - Hsin, Y. M.

AU - Vu, D. P.

AU - Asbeck, P. M.

PY - 1996/7/4

Y1 - 1996/7/4

N2 - Npn abrupt AlGaAs/GaAs heterojunction bipolar transistors with thin base widths (WB) down to 200Å have been fabricated for the first time, and their collector and base current-voltage characteristics have been studied. The experimental results show that the surface recombination base current and the base bulk recombination current are both significantly lower in 200Å base HBTs than in comparable devices with 500Å base width. For the thin base HBTS, the base bulk recombination current density is proportional to ~∼WB and the surface recombination current density is proportional to ∼WB2. The experiment also showed that the collector current across a thin p+ GaAs base is limited, as expected, by the thermal velocity of the electrons rather than by conventional diffusive transport.

AB - Npn abrupt AlGaAs/GaAs heterojunction bipolar transistors with thin base widths (WB) down to 200Å have been fabricated for the first time, and their collector and base current-voltage characteristics have been studied. The experimental results show that the surface recombination base current and the base bulk recombination current are both significantly lower in 200Å base HBTs than in comparable devices with 500Å base width. For the thin base HBTS, the base bulk recombination current density is proportional to ~∼WB and the surface recombination current density is proportional to ∼WB2. The experiment also showed that the collector current across a thin p+ GaAs base is limited, as expected, by the thermal velocity of the electrons rather than by conventional diffusive transport.

KW - Aluminium gallium arsenide

KW - Gallium arsenide

KW - Heterojunction bipolar transistors

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U2 - 10.1049/el:19960853

DO - 10.1049/el:19960853

M3 - 期刊論文

AN - SCOPUS:0030568652

SN - 0013-5194

VL - 32

SP - 1323

EP - 1324

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Experimental I-V characteristics of AIGaAs/GaAs heterojunction bipolar transistors with very thin bases

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Keywords

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