Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs

X. S. Cheng, E. R. Hsieh, Steve S. Chung, C. H. Tsai, T. L. Tsai, W. T. Chiang, C. T. Tsai, C. W. Liang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VSM) based on experimentally measurements has been developed to determine the injection velocity (vinj) and ballistic efficiency (Bsat). DSS device with low series source/drain resistance and high Bsat of 0.47 leads to 15.2% of Id enhancement over the conventional MOSFET. The VSM demonstrates more accurate Bsat and vinj results than the conventional Temperature Dependent Method(TDM) ones.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages120-121
Number of pages2
DOIs
StatePublished - 2011
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
Duration: 25 Apr 201127 Apr 2011

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/TerritoryTaiwan
CityHsinchu
Period25/04/1127/04/11

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