Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules

Hsuan Lin; Sheng Yun Wang; Chia Hsien Lin; Wen Hao Chang; Shun Jen Cheng; Ming Chih Lee; Wen Yen Chen; Tzu Min Hsu; Tung Po Hsieh; Jen Inn Chyi

doi:10.1002/pssc.200880623

Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules

Hsuan Lin, Sheng Yun Wang, Chia Hsien Lin, Wen Hao Chang, Shun Jen Cheng, Ming Chih Lee, Wen Yen Chen, Tzu Min Hsu, Tung Po Hsieh, Jen Inn Chyi

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present a spectroscopic study of single quantum-dot molecules (QDMs) formed by two closely stacked In_0.5Ga_0.5As/GaAs layers. It was found that the interdot coupling and directional energy transfer between the two adjacent dots can be controlled by temperature tuning. Direct and indirect excitons, as well as charged excitons in single QDMs were classified and identified by excitation-power dependent, excitation-energy dependent and polarization-resolved micro-photoluminescence measurements. With the increasing temperature, the direct-exciton intensity decreases while the indi-rect-exciton intensity increases. A rate equation model considering phonon mediated processes has been developed. The directional energy transfer in QDMs is explained in terms of the phonon-assisted tunnelling of hole between the two adjacent dots.

Original language	English
Pages (from-to)	860-863
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	4
DOIs	https://doi.org/10.1002/pssc.200880623
State	Published - 2009
Event	5th International Conference on Semiconductor Quantum Dots, QD 2008 - Gyeongju, Korea, Republic of Duration: 11 May 2008 → 16 May 2008

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title = "Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules",

abstract = "We present a spectroscopic study of single quantum-dot molecules (QDMs) formed by two closely stacked In0.5Ga0.5As/GaAs layers. It was found that the interdot coupling and directional energy transfer between the two adjacent dots can be controlled by temperature tuning. Direct and indirect excitons, as well as charged excitons in single QDMs were classified and identified by excitation-power dependent, excitation-energy dependent and polarization-resolved micro-photoluminescence measurements. With the increasing temperature, the direct-exciton intensity decreases while the indi-rect-exciton intensity increases. A rate equation model considering phonon mediated processes has been developed. The directional energy transfer in QDMs is explained in terms of the phonon-assisted tunnelling of hole between the two adjacent dots.",

author = "Hsuan Lin and Wang, {Sheng Yun} and Lin, {Chia Hsien} and Chang, {Wen Hao} and Cheng, {Shun Jen} and Lee, {Ming Chih} and Chen, {Wen Yen} and Hsu, {Tzu Min} and Hsieh, {Tung Po} and Chyi, {Jen Inn}",

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volume = "6",

pages = "860--863",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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note = "5th International Conference on Semiconductor Quantum Dots, QD 2008 ; Conference date: 11-05-2008 Through 16-05-2008",

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TY - JOUR

T1 - Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules

AU - Lin, Hsuan

AU - Wang, Sheng Yun

AU - Lin, Chia Hsien

AU - Chang, Wen Hao

AU - Cheng, Shun Jen

AU - Lee, Ming Chih

AU - Chen, Wen Yen

AU - Hsu, Tzu Min

AU - Hsieh, Tung Po

AU - Chyi, Jen Inn

PY - 2009

Y1 - 2009

N2 - We present a spectroscopic study of single quantum-dot molecules (QDMs) formed by two closely stacked In0.5Ga0.5As/GaAs layers. It was found that the interdot coupling and directional energy transfer between the two adjacent dots can be controlled by temperature tuning. Direct and indirect excitons, as well as charged excitons in single QDMs were classified and identified by excitation-power dependent, excitation-energy dependent and polarization-resolved micro-photoluminescence measurements. With the increasing temperature, the direct-exciton intensity decreases while the indi-rect-exciton intensity increases. A rate equation model considering phonon mediated processes has been developed. The directional energy transfer in QDMs is explained in terms of the phonon-assisted tunnelling of hole between the two adjacent dots.

AB - We present a spectroscopic study of single quantum-dot molecules (QDMs) formed by two closely stacked In0.5Ga0.5As/GaAs layers. It was found that the interdot coupling and directional energy transfer between the two adjacent dots can be controlled by temperature tuning. Direct and indirect excitons, as well as charged excitons in single QDMs were classified and identified by excitation-power dependent, excitation-energy dependent and polarization-resolved micro-photoluminescence measurements. With the increasing temperature, the direct-exciton intensity decreases while the indi-rect-exciton intensity increases. A rate equation model considering phonon mediated processes has been developed. The directional energy transfer in QDMs is explained in terms of the phonon-assisted tunnelling of hole between the two adjacent dots.

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U2 - 10.1002/pssc.200880623

DO - 10.1002/pssc.200880623

M3 - 會議論文

AN - SCOPUS:70349423883

SN - 1862-6351

VL - 6

SP - 860

EP - 863

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 4

T2 - 5th International Conference on Semiconductor Quantum Dots, QD 2008

Y2 - 11 May 2008 through 16 May 2008

ER -

Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules

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