Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

K. Y. Lai, T. Paskova, V. D. Wheeler, J. A. Grenko, M. A.L. Johnson, D. W. Barlage, K. Udwary, E. A. Preble, K. R. Evans

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11 Scopus citations

Abstract

InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.

Original languageEnglish
Article number113104
JournalJournal of Applied Physics
Volume106
Issue number11
DOIs
StatePublished - 2009

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