Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

K. Y. Lai; T. Paskova; V. D. Wheeler; J. A. Grenko; M. A.L. Johnson; D. W. Barlage; K. Udwary; E. A. Preble; K. R. Evans

doi:10.1063/1.3264729

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

K. Y. Lai, T. Paskova, V. D. Wheeler, J. A. Grenko, M. A.L. Johnson, D. W. Barlage, K. Udwary, E. A. Preble, K. R. Evans

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.

Original language	English
Article number	113104
Journal	Journal of Applied Physics
Volume	106
Issue number	11
DOIs	https://doi.org/10.1063/1.3264729
State	Published - 2009

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title = "Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates",

abstract = "InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.",

author = "Lai, {K. Y.} and T. Paskova and Wheeler, {V. D.} and Grenko, {J. A.} and Johnson, {M. A.L.} and Barlage, {D. W.} and K. Udwary and Preble, {E. A.} and Evans, {K. R.}",

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T1 - Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

AU - Lai, K. Y.

AU - Paskova, T.

AU - Wheeler, V. D.

AU - Grenko, J. A.

AU - Johnson, M. A.L.

AU - Barlage, D. W.

AU - Udwary, K.

AU - Preble, E. A.

AU - Evans, K. R.

PY - 2009

Y1 - 2009

N2 - InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.

AB - InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.

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DO - 10.1063/1.3264729

M3 - 期刊論文

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SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

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