Excess noise of 850-nm silicon avalanche photodiodes fabricated using CMOS process

Fang Ping Chou, Yu Chen Hsieh, Chih Ai Huang, Yue Ming Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This study analyzes the effect of biases in the deep n-well on excess noise in 850-nm Si avalanche photodiodes (APDs). Si APDs were fabricated in standard 0.18-μm CMOS technology. The extra bias in the deep n-well can effectively eliminate the slow photo-generated carriers from the substrate and improve bandwidth and excess noise.

Original languageEnglish
Title of host publication2014 International Symposium on Next-Generation Electronics, ISNE 2014
PublisherIEEE Computer Society
ISBN (Print)9781479947805
DOIs
StatePublished - 2014
Event3rd International Symposium on Next-Generation Electronics, ISNE 2014 - Taoyuan, Taiwan
Duration: 7 May 201410 May 2014

Publication series

Name2014 International Symposium on Next-Generation Electronics, ISNE 2014

Conference

Conference3rd International Symposium on Next-Generation Electronics, ISNE 2014
Country/TerritoryTaiwan
CityTaoyuan
Period7/05/1410/05/14

Keywords

  • CMOS process
  • excess noise
  • Si avalanche photodiodes

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