Evolution of structural order in germanium ion-implanted amorphous silicon layers

S. L. Cheng, H. H. Lin, J. H. He, T. F. Chiang, C. H. Yu, L. J. Chen, C. K. Yang, D. Y. Wu, S. C. Chien, W. C. Chen

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18 Scopus citations

Abstract

High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature.

Original languageEnglish
Pages (from-to)910-913
Number of pages4
JournalJournal of Applied Physics
Volume92
Issue number2
DOIs
StatePublished - 15 Jul 2002

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