TY - JOUR
T1 - Evolution of a-Si:H to nc-Si:H transition of hydrogenated silicon films deposited by trichlorosilane using principle component analysis of optical emission spectroscopy
AU - Wang, Song Ho
AU - Chang, Hsueh Er
AU - Lee, Chien Chieh
AU - Fuh, Yiin Kuen
AU - Li, Tomi T.
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2020/1/15
Y1 - 2020/1/15
N2 - Plasma Enhanced Chemical Vapor Deposition (PECVD) has been used for direct production of wafer-equivalent quality silicon thin film solar cells, includes the nc-Si:H deposition film. In this paper, the nano-crystalline silicon thin films were deposited on Si substrate by PECVD from source gas of trichlorosilane (TCS, SiHCl3) at temperatures 400 °C. The in-situ plasma monitoring and the resultant deposited film properties of the a-Si:H to nc-Si:H transition (ANT) were characterized by Optical emission spectroscopy (OES), Fourier transfer infrared spectroscopy (FTIR), Raman spectroscopy (RS), Scanning Electron Microscope (SEM) and Alpha-Step profiler. In addition, principal component analysis (PCA) based on large scale OES dataset was performed and the value of crystalline phase (VCP) was established to differentially characterize the nanocrystalline phase as mean VCP of 0.11 and the control limits of 0.06, which can be used as the in-situ monitoring tool for crystalline phase characterization. Through the proposed PC1-DEV algorithm, the high-dimensional OES data of complexity should be selected and reduced to radicals of interest (SiCl*, SiCl2*, Hα and Hβ) to make a decision with strong classifier performance.
AB - Plasma Enhanced Chemical Vapor Deposition (PECVD) has been used for direct production of wafer-equivalent quality silicon thin film solar cells, includes the nc-Si:H deposition film. In this paper, the nano-crystalline silicon thin films were deposited on Si substrate by PECVD from source gas of trichlorosilane (TCS, SiHCl3) at temperatures 400 °C. The in-situ plasma monitoring and the resultant deposited film properties of the a-Si:H to nc-Si:H transition (ANT) were characterized by Optical emission spectroscopy (OES), Fourier transfer infrared spectroscopy (FTIR), Raman spectroscopy (RS), Scanning Electron Microscope (SEM) and Alpha-Step profiler. In addition, principal component analysis (PCA) based on large scale OES dataset was performed and the value of crystalline phase (VCP) was established to differentially characterize the nanocrystalline phase as mean VCP of 0.11 and the control limits of 0.06, which can be used as the in-situ monitoring tool for crystalline phase characterization. Through the proposed PC1-DEV algorithm, the high-dimensional OES data of complexity should be selected and reduced to radicals of interest (SiCl*, SiCl2*, Hα and Hβ) to make a decision with strong classifier performance.
KW - A-Si:H to nc-Si:H transition (ANT)
KW - Optical emission spectroscopy (OES)
KW - Plasma enhanced chemical vapor deposition (PECVD)
KW - Principal component analysis (PCA)
KW - Trichlorosilane (TCS)
KW - Value of crystalline phase (VCP)
UR - http://www.scopus.com/inward/record.url?scp=85072841674&partnerID=8YFLogxK
U2 - 10.1016/j.matchemphys.2019.122186
DO - 10.1016/j.matchemphys.2019.122186
M3 - 期刊論文
AN - SCOPUS:85072841674
SN - 0254-0584
VL - 240
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
M1 - 122186
ER -