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Keyphrases
GaN Heterostructure
100%
Charged Interface
100%
Interface States
100%
Temperature Effect
66%
Hall Measurement
33%
Scattering Mechanism
33%
High Performance
16%
AlGaN-GaN
16%
High Electron Mobility Transistor
16%
Dislocation Density
16%
Electron Density
16%
Electron Mobility
16%
Centroid
16%
Electron Scattering
16%
Growth Conditions
16%
2-dimensional Electron Gas (2DEG)
16%
State of Charge
16%
Aluminum Gallium Nitride (AlGaN)
16%
Hall Mobility
16%
Subthreshold Slope
16%
Heterointerface
16%
Scattering Density
16%
III-nitride Devices
16%
III-nitride Heterostructures
16%
Phonon-phonon Scattering
16%
Interface Roughness Scattering
16%
Matthiessen's Rule
16%
Physics
Nitride
100%
Phonon
100%
High Electron Mobility Transistors
50%
Electron Density
50%
Electron Scattering
50%
Electron Mobility
50%
Heterojunctions
50%
Electron Gas
50%
Material Science
Heterojunction
100%
Electron Mobility
50%
Nitride Compound
50%
Density
25%
Aluminum Nitride
25%
Transistor
25%
Carrier Concentration
25%
Hall Mobility
25%
Chemistry
Interface State
100%
Electron Mobility
33%
Nitride
33%
Phonon
33%
Electron Density
16%
Two-Dimensional Electron Gas
16%
Interface Roughness
16%
Electron Scattering
16%