Original language | English |
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Article number | 069902 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 6 |
DOIs |
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State | Published - 2 Oct 2014 |
Erratum: The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors (Applied Physics Letters(2014) 104 (033503))
W. C. Liao, Y. L. Chen, C. H. Chen, J. I. Chyi, Y. M. Hsin
Research output: Contribution to journal › Comment/debate
2
Scopus
citations