Erratum: The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors (Applied Physics Letters(2014) 104 (033503))

W. C. Liao, Y. L. Chen, C. H. Chen, J. I. Chyi, Y. M. Hsin

Research output: Contribution to journalComment/debate

2 Scopus citations
Original languageEnglish
Article number069902
JournalApplied Physics Letters
Issue number6
StatePublished - 2 Oct 2014

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