Erratum: The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors (Applied Physics Letters(2014) 104 (033503))

W. C. Liao; Y. L. Chen; C. H. Chen; J. I. Chyi; Y. M. Hsin

doi:10.1063/1.4865900

Erratum: The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors (Applied Physics Letters(2014) 104 (033503))

W. C. Liao, Y. L. Chen, C. H. Chen, J. I. Chyi, Y. M. Hsin

Research output: Contribution to journal › Comment/debate

2 Scopus citations

Original language	English
Article number	069902
Journal	Applied Physics Letters
Volume	104
Issue number	6
DOIs	https://doi.org/10.1063/1.4865900
State	Published - 2 Oct 2014

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10.1063/1.4865900

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AU - Chyi, J. I.

AU - Hsin, Y. M.

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