Erratum: In situ measurements of thermal and electrical effects of strain in flip-chip silicon dies using synchrotron radiation X-rays (Journal of Electronic Materials (2009) 38:11 (2308-2313) DOI: 10.1007/s11664-009-0934-9))

Albert T. Wu; Chun Yang Tsai; Chin Li Kao; Meng Kai Shih; Yi Shao Lai; Hsin Yi Lee; Ching Shun Ku

doi:10.1007/s11664-009-1004-z

Erratum: In situ measurements of thermal and electrical effects of strain in flip-chip silicon dies using synchrotron radiation X-rays (Journal of Electronic Materials (2009) 38:11 (2308-2313) DOI: 10.1007/s11664-009-0934-9))

Albert T. Wu, Chun Yang Tsai, Chin Li Kao, Meng Kai Shih, Yi Shao Lai, Hsin Yi Lee, Ching Shun Ku

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	2786
Number of pages	1
Journal	Journal of Electronic Materials
Volume	38
Issue number	12
DOIs	https://doi.org/10.1007/s11664-009-1004-z
State	Published - Dec 2009

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10.1007/s11664-009-1004-z

Cite this

Wu, A. T., Tsai, C. Y., Kao, C. L., Shih, M. K., Lai, Y. S., Lee, H. Y., & Ku, C. S. (2009). Erratum: In situ measurements of thermal and electrical effects of strain in flip-chip silicon dies using synchrotron radiation X-rays (Journal of Electronic Materials (2009) 38:11 (2308-2313) DOI: 10.1007/s11664-009-0934-9)). Journal of Electronic Materials, 38(12), 2786. https://doi.org/10.1007/s11664-009-1004-z

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title = "Erratum: In situ measurements of thermal and electrical effects of strain in flip-chip silicon dies using synchrotron radiation X-rays (Journal of Electronic Materials (2009) 38:11 (2308-2313) DOI: 10.1007/s11664-009-0934-9))",

author = "Wu, {Albert T.} and Tsai, {Chun Yang} and Kao, {Chin Li} and Shih, {Meng Kai} and Lai, {Yi Shao} and Lee, {Hsin Yi} and Ku, {Ching Shun}",

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Wu, AT, Tsai, CY, Kao, CL, Shih, MK, Lai, YS, Lee, HY & Ku, CS 2009, 'Erratum: In situ measurements of thermal and electrical effects of strain in flip-chip silicon dies using synchrotron radiation X-rays (Journal of Electronic Materials (2009) 38:11 (2308-2313) DOI: 10.1007/s11664-009-0934-9))', Journal of Electronic Materials, vol. 38, no. 12, pp. 2786. https://doi.org/10.1007/s11664-009-1004-z

Erratum: In situ measurements of thermal and electrical effects of strain in flip-chip silicon dies using synchrotron radiation X-rays (Journal of Electronic Materials (2009) 38:11 (2308-2313) DOI: 10.1007/s11664-009-0934-9)). / Wu, Albert T.; Tsai, Chun Yang; Kao, Chin Li et al.
In: Journal of Electronic Materials, Vol. 38, No. 12, 12.2009, p. 2786.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - In situ measurements of thermal and electrical effects of strain in flip-chip silicon dies using synchrotron radiation X-rays (Journal of Electronic Materials (2009) 38:11 (2308-2313) DOI: 10.1007/s11664-009-0934-9))

AU - Wu, Albert T.

AU - Tsai, Chun Yang

AU - Kao, Chin Li

AU - Shih, Meng Kai

AU - Lai, Yi Shao

AU - Lee, Hsin Yi

AU - Ku, Ching Shun

PY - 2009/12

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DO - 10.1007/s11664-009-1004-z

M3 - 評論/辯論

AN - SCOPUS:72549110649

SN - 0361-5235

VL - 38

SP - 2786

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -