Erratum: "Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-band width product of 428 GHz" (IEEE Photonics Technology Letters)

J. W. Shi, Y. S. Wu, Z. R. Li, P. S. Chen

Research output: Contribution to journalComment/debate

Original languageEnglish
Pages (from-to)1694
Number of pages1
JournalIEEE Photonics Technology Letters
Issue number20
StatePublished - Oct 2007

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