Erratum: "Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-band width product of 428 GHz" (IEEE Photonics Technology Letters)

J. W. Shi; Y. S. Wu; Z. R. Li; P. S. Chen

doi:10.1109/LPT.2007.908373

Erratum: "Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-band width product of 428 GHz" (IEEE Photonics Technology Letters)

J. W. Shi, Y. S. Wu, Z. R. Li, P. S. Chen

Department of Electrical Engineering

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	1694
Number of pages	1
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	20
DOIs	https://doi.org/10.1109/LPT.2007.908373
State	Published - Oct 2007

Access to Document

10.1109/LPT.2007.908373

Cite this

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author = "Shi, {J. W.} and Wu, {Y. S.} and Li, {Z. R.} and Chen, {P. S.}",

year = "2007",

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Erratum: "Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-band width product of 428 GHz" (IEEE Photonics Technology Letters). / Shi, J. W.; Wu, Y. S.; Li, Z. R. et al.
In: IEEE Photonics Technology Letters, Vol. 19, No. 20, 10.2007, p. 1694.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - "Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-band width product of 428 GHz" (IEEE Photonics Technology Letters)

AU - Shi, J. W.

AU - Wu, Y. S.

AU - Li, Z. R.

AU - Chen, P. S.

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DO - 10.1109/LPT.2007.908373

M3 - 評論/辯論

AN - SCOPUS:35448930833

SN - 1041-1135

VL - 19

SP - 1694

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 20

ER -