Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties

C. T. Huang, C. L. Hsin, K. W. Huang, C. Y. Lee, P. H. Yeh, U. S. Chen, L. J. Chen

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Abstract

Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with Er Cl3 6 H2 O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5× 10-2 cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.

Original languageEnglish
Article number093133
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
StatePublished - 2007

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