Er diffusion into gallium nitride

Chii Chang Chen; Yi Sheng Ting; Chien Chieh Lee; Gou Chung Chi; Purushottam Chakraborty; Tapas Chini; Hui Wen Chuang; Jian Shihn Tsang; Cheng Ta Kuo; Wen Chung Tsai; Shu Han Chen; Jen Inn Chyi

doi:10.1016/S0038-1101(02)00407-0

Er diffusion into gallium nitride

Chii Chang Chen
, Yi Sheng Ting
, Chien Chieh Lee
, Gou Chung Chi
, Purushottam Chakraborty
, Tapas Chini
, Hui Wen Chuang
, Jian Shihn Tsang
, Cheng Ta Kuo
, Wen Chung Tsai
, Shu Han Chen
, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this study, we report the diffusion mechanism of Er in GaN and the optical properties of Er-diffused GaN. The diffusion coefficient has been measured by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. Erbium is also implanted into GaN to compare the photoluminescence (PL) characteristics. The PL emission of Er-diffused and implanted GaN can be observed in infrared region. The emission intensity efficiency related to the Er concentration distribution after the Er diffusion is discussed.

Original language	English
Pages (from-to)	529-531
Number of pages	3
Journal	Solid-State Electronics
Volume	47
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1101(02)00407-0
State	Published - Mar 2003

Keywords

Diffusion
Erbium
GaN
Ion implantation
Rare earth

Access to Document

10.1016/S0038-1101(02)00407-0

Cite this

@article{0d2053ad7fa24352b5a0bddf4707bd08,

title = "Er diffusion into gallium nitride",

abstract = "In this study, we report the diffusion mechanism of Er in GaN and the optical properties of Er-diffused GaN. The diffusion coefficient has been measured by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. Erbium is also implanted into GaN to compare the photoluminescence (PL) characteristics. The PL emission of Er-diffused and implanted GaN can be observed in infrared region. The emission intensity efficiency related to the Er concentration distribution after the Er diffusion is discussed.",

keywords = "Diffusion, Erbium, GaN, Ion implantation, Rare earth",

author = "Chen, \{Chii Chang\} and Ting, \{Yi Sheng\} and Lee, \{Chien Chieh\} and Chi, \{Gou Chung\} and Purushottam Chakraborty and Tapas Chini and Chuang, \{Hui Wen\} and Tsang, \{Jian Shihn\} and Kuo, \{Cheng Ta\} and Tsai, \{Wen Chung\} and Chen, \{Shu Han\} and Chyi, \{Jen Inn\}",

note = "Funding Information: The work was supported by Grant from the National Science Council, Taiwan and MOE Program for Promoting Academic Excellence of Universities under the grant number 91-E-FA06-1-4.",

year = "2003",

month = mar,

doi = "10.1016/S0038-1101(02)00407-0",

language = "???core.languages.en\_GB???",

volume = "47",

pages = "529--531",

journal = "Solid-State Electronics",

issn = "0038-1101",

number = "3",

}

TY - JOUR

T1 - Er diffusion into gallium nitride

AU - Chen, Chii Chang

AU - Ting, Yi Sheng

AU - Lee, Chien Chieh

AU - Chi, Gou Chung

AU - Chakraborty, Purushottam

AU - Chini, Tapas

AU - Chuang, Hui Wen

AU - Tsang, Jian Shihn

AU - Kuo, Cheng Ta

AU - Tsai, Wen Chung

AU - Chen, Shu Han

AU - Chyi, Jen Inn

N1 - Funding Information: The work was supported by Grant from the National Science Council, Taiwan and MOE Program for Promoting Academic Excellence of Universities under the grant number 91-E-FA06-1-4.

PY - 2003/3

Y1 - 2003/3

N2 - In this study, we report the diffusion mechanism of Er in GaN and the optical properties of Er-diffused GaN. The diffusion coefficient has been measured by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. Erbium is also implanted into GaN to compare the photoluminescence (PL) characteristics. The PL emission of Er-diffused and implanted GaN can be observed in infrared region. The emission intensity efficiency related to the Er concentration distribution after the Er diffusion is discussed.

AB - In this study, we report the diffusion mechanism of Er in GaN and the optical properties of Er-diffused GaN. The diffusion coefficient has been measured by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. Erbium is also implanted into GaN to compare the photoluminescence (PL) characteristics. The PL emission of Er-diffused and implanted GaN can be observed in infrared region. The emission intensity efficiency related to the Er concentration distribution after the Er diffusion is discussed.

KW - Diffusion

KW - Erbium

KW - GaN

KW - Ion implantation

KW - Rare earth

UR - https://www.scopus.com/pages/publications/0037345430

U2 - 10.1016/S0038-1101(02)00407-0

DO - 10.1016/S0038-1101(02)00407-0

M3 - 期刊論文

AN - SCOPUS:0037345430

SN - 0038-1101

VL - 47

SP - 529

EP - 531

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Er diffusion into gallium nitride

Abstract

Keywords

Access to Document

Fingerprint

Cite this