Er diffusion into gallium nitride

Chii Chang Chen, Yi Sheng Ting, Chien Chieh Lee, Gou Chung Chi, Purushottam Chakraborty, Tapas Chini, Hui Wen Chuang, Jian Shihn Tsang, Cheng Ta Kuo, Wen Chung Tsai, Shu Han Chen, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this study, we report the diffusion mechanism of Er in GaN and the optical properties of Er-diffused GaN. The diffusion coefficient has been measured by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. Erbium is also implanted into GaN to compare the photoluminescence (PL) characteristics. The PL emission of Er-diffused and implanted GaN can be observed in infrared region. The emission intensity efficiency related to the Er concentration distribution after the Er diffusion is discussed.

Original languageEnglish
Pages (from-to)529-531
Number of pages3
JournalSolid-State Electronics
Issue number3
StatePublished - Mar 2003


  • Diffusion
  • Erbium
  • GaN
  • Ion implantation
  • Rare earth


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