Epitaxial nickel disilicide with low resistivity and excellent reliability

Cheng Lun Hsin, Shiu Sheng Deng

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Ultra-thin epitaxial NiSi2 was formed, and its structure was examined by electron microscopy and x-ray diffraction. Compared with previous reports, the measured resistivity of the epitaxial NiSi2 was unprecedentedly low, reaching 7 μΩ cm in the experimental results and up to 14.93 μΩ cm after modification. The reliability, which was investigated under different temperatures and current densities to understand its electronic characteristics, was 1.5 times better than that of the conventional polycrystalline counterpart. Black's equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics of epitaxial and poly-NiSi2. Confidence intervals at 95% for each MTTF confirmed the single failure mode. The electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that epitaxial NiSi2 is a promising contact material for future electronics.

Original languageEnglish
Article number065704
JournalNanotechnology
Volume27
Issue number6
DOIs
StatePublished - 12 Jan 2016

Keywords

  • epitaxial
  • NiSi
  • reliability
  • silicide
  • TEM

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