Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography

Guan Ting Chen; Chia Hua Chan; Chia Hung Hou; Hsueh Hsing Liu; Nai Wei Shiu; Mao Nan Chang; Chii Chang Chen; Jen Inn Chyi

doi:10.1117/12.764475

Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography

Guan Ting Chen, Chia Hua Chan, Chia Hung Hou, Hsueh Hsing Liu, Nai Wei Shiu, Mao Nan Chang, Chii Chang Chen, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The authors report on the growth of GaN on AlGaN/(111)Si micropillar array by metal-organic chemical vapor deposition. Using the substrates with micropillar array, 2 μm-thick GaN films without cracks can be achieved. Transmission electron microscopy, atomic force microscopy, and micro-Raman studies indicate that the dislocation density and residual stress of the GaN grown on micropillar array are also reduced. The results reveal the potential of this type of substrates for growing GaN-based devices as well as preparing GaN freestanding substrates.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices III
DOIs	https://doi.org/10.1117/12.764475
State	Published - 2008
Event	Society of Photo-Optical Instrumentation Engineers (SPIE) - San Jose, CA, United States Duration: 21 Jan 2008 → 24 Jan 2008

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6894
ISSN (Print)	0277-786X

Conference

Conference	Society of Photo-Optical Instrumentation Engineers (SPIE)
Country/Territory	United States
City	San Jose, CA
Period	21/01/08 → 24/01/08

Keywords

Dislocation
GaN
MOCVD
Si substrate

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Chen, G. T., Chan, C. H., Hou, C. H., Liu, H. H., Shiu, N. W., Chang, M. N., Chen, C. C., & Chyi, J. I. (2008). Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography. In Gallium Nitride Materials and Devices III Article 689408 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6894). https://doi.org/10.1117/12.764475

@inproceedings{6be14b98dada4e20b425cfc4fb5fdf23,

title = "Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography",

abstract = "The authors report on the growth of GaN on AlGaN/(111)Si micropillar array by metal-organic chemical vapor deposition. Using the substrates with micropillar array, 2 μm-thick GaN films without cracks can be achieved. Transmission electron microscopy, atomic force microscopy, and micro-Raman studies indicate that the dislocation density and residual stress of the GaN grown on micropillar array are also reduced. The results reveal the potential of this type of substrates for growing GaN-based devices as well as preparing GaN freestanding substrates.",

keywords = "Dislocation, GaN, MOCVD, Si substrate",

author = "Chen, {Guan Ting} and Chan, {Chia Hua} and Hou, {Chia Hung} and Liu, {Hsueh Hsing} and Shiu, {Nai Wei} and Chang, {Mao Nan} and Chen, {Chii Chang} and Chyi, {Jen Inn}",

year = "2008",

doi = "10.1117/12.764475",

language = "???core.languages.en_GB???",

isbn = "9780819470690",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Gallium Nitride Materials and Devices III",

note = "Society of Photo-Optical Instrumentation Engineers (SPIE) ; Conference date: 21-01-2008 Through 24-01-2008",

}

Chen, GT, Chan, CH, Hou, CH, Liu, HH, Shiu, NW, Chang, MN, Chen, CC & Chyi, JI 2008, Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography. in Gallium Nitride Materials and Devices III., 689408, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6894, Society of Photo-Optical Instrumentation Engineers (SPIE), San Jose, CA, United States, 21/01/08. https://doi.org/10.1117/12.764475

Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography. / Chen, Guan Ting; Chan, Chia Hua; Hou, Chia Hung et al.
Gallium Nitride Materials and Devices III. 2008. 689408 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6894).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography

AU - Chen, Guan Ting

AU - Chan, Chia Hua

AU - Hou, Chia Hung

AU - Liu, Hsueh Hsing

AU - Shiu, Nai Wei

AU - Chang, Mao Nan

AU - Chen, Chii Chang

AU - Chyi, Jen Inn

PY - 2008

Y1 - 2008

N2 - The authors report on the growth of GaN on AlGaN/(111)Si micropillar array by metal-organic chemical vapor deposition. Using the substrates with micropillar array, 2 μm-thick GaN films without cracks can be achieved. Transmission electron microscopy, atomic force microscopy, and micro-Raman studies indicate that the dislocation density and residual stress of the GaN grown on micropillar array are also reduced. The results reveal the potential of this type of substrates for growing GaN-based devices as well as preparing GaN freestanding substrates.

AB - The authors report on the growth of GaN on AlGaN/(111)Si micropillar array by metal-organic chemical vapor deposition. Using the substrates with micropillar array, 2 μm-thick GaN films without cracks can be achieved. Transmission electron microscopy, atomic force microscopy, and micro-Raman studies indicate that the dislocation density and residual stress of the GaN grown on micropillar array are also reduced. The results reveal the potential of this type of substrates for growing GaN-based devices as well as preparing GaN freestanding substrates.

KW - Dislocation

KW - GaN

KW - MOCVD

KW - Si substrate

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SN - 9780819470690

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices III

T2 - Society of Photo-Optical Instrumentation Engineers (SPIE)

Y2 - 21 January 2008 through 24 January 2008

ER -

Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography

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Keywords

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