Epitaxial growth of Cu on Ag(1 1 1) studied with angle-resolved photoemission spectroscopy

Dah An Luh, Chih Hao Huang, Cheng Maw Cheng, Ku Ding Tsuei

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The growth of Cu on Ag(1 1 1) under varied growth conditions was investigated with angle-resolved photoemission spectra. The evolution of Cu/Ag(1 1 1) during annealing was characterized on monitoring its surface states. The surface morphology of a Cu film on Ag(1 1 1) depends on the temperature and the Cu coverage. Islands or crystalline films develop when Cu is deposited at ∼300 K. Defects in the Cu films penetrate deeply into the Ag(1 1 1) substrate and expose the Ag(1 1 1) surface. The deposition of Cu at a low temperature results in disordered films. On annealing, the films become ordered with defects. Our results show the segregation of Ag on the Cu surface, which occurs at 300 K and becomes accelerated significantly at ∼380 K. After being annealed above 430 K, all islands and films of Cu are fully covered with Ag, showing a (9 × 9) reconstruction. Our results indicate also that the segregation of Ag on the Cu surface occurs only after the Ag(1 1 1) surface is exposed, indicating that Ag atoms migrate to the Cu(1 1 1) surface, not through bulk Cu, but along the walls of the islands and the defects in the films.

Original languageEnglish
Pages (from-to)235-239
Number of pages5
JournalApplied Surface Science
StatePublished - 1 Nov 2015


  • Ag(1 1 1)
  • Cu
  • Epitaxial growth
  • Metallic thin films
  • Surface state


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