Epitaxial AlN thin film surface acoustic wave devices prepared on GaN/sapphire using low-temperature helicon sputtering system

H. L. Kao, W. C. Chen, Wei Cheng Chien, Hui Feng Lin, Tzu Chien Chen, Chung Yi Lin, Y. T. Lin, J. I. Chyi, C. H. Hsu

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

High-quality epitaxial AlN films have been deposited on GaN/sapphire using helicon sputtering at a temperature of 300°C. The surface acoustic wave (SAW) characteristics, in terms of insertion loss, stopband rejection, and electromechanical coupling coefficient, of SAW devices fabricated on AIN/GaN/sapphire are much superior than those fabricated on GaN/ sapphire. The investigation of environmental effects, including temperature and relative humidity, shows that the ambient stability can be improved with the deposition of an AlN film on GaN/sapphire. An oscillator fabricated using an AlN/GaN/ sapphire-based SAW device was developed for application in sensors. The composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and utilize their semiconducting, optoelectronic, and piezoelectric properties.

Original languageEnglish
Pages (from-to)124-129
Number of pages6
JournalJapanese Journal of Applied Physics
Volume47
Issue number1
DOIs
StatePublished - 18 Jan 2008

Keywords

  • AlN
  • GaN
  • Helicon sputtering
  • Humidity effects
  • SAW filter
  • Temperature coefficient of frequency (TCF)

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