Enlargement of bulk non-polar GaN substrates by HVPE regrowth

K. Y. Lai, V. D. Wheeler, J. A. Grenko, M. A.L. Johnson, A. D. Hanser, E. A. Preble, L. Liu, T. Paskova, K. R. Evans

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


M-plane non-polar bulk GaN substrates were regrown by hydride vapour phase epitaxy (HVPE), aiming to enlarge their lateral size. The non-polar GaN substrates were synthesized by growing thick GaN boules by HVPE along the c-axis, and wafering transversely to expose non-polar (m- or a-plane) surfaces. Non-polar GaN substrates obtained in this manner contains lower defect density comparing to those produced by heteroepitaxial growth. After the regrowth, substantial lateral expansion in [0001], [1120] and [1120] was observed. Threading dislocation densities were estimated by cathodoluminescence measured at the cross-section areas. The dislocation densities in the substrate and the regrown areas were approximately 5×106 cm-2 and 1×106 cm-2, respectively, indicating a comparable structural quality achieved by the regrowth. Non-polar GaN substrates prepared by this process provide a promising method to fabricate devices for next generation.

Original languageEnglish
Pages (from-to)1886-1888
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
StatePublished - 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 16 Sep 200721 Sep 2007


Dive into the research topics of 'Enlargement of bulk non-polar GaN substrates by HVPE regrowth'. Together they form a unique fingerprint.

Cite this