Enhancing the light extraction of InGaN light-emitting diodes by patterning the dicing streets

Hung Cheng Lin, Yen Chun Tseng, Jen Inn Chyi, Chia Ming Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum efficiency (EQE) of the LEDs at 20 mA increased by 12.9% because of the roughening of the passive region which enhanced the escape cone.

Original languageEnglish
Title of host publication2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS
DOIs
StatePublished - 2008
EventConference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 - San Jose, CA, United States
Duration: 4 May 20089 May 2008

Publication series

NameConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Conference

ConferenceConference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008
Country/TerritoryUnited States
CitySan Jose, CA
Period4/05/089/05/08

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