Enhancing capacitance of dielectric Si-oxide film by inserting indium-tin-oxide interlayer

Tzu Hsuan Yen, Chia Yueh Chou, Bao Jhen Li, Cheng Yi Liu

Research output: Contribution to journalArticlepeer-review


Two parallel-plate capacitors, Cu/Si-oxide/Cu (MIM) and Cu/Si-oxide/indium-tin-oxide/Cu (MIM-ITO), were fabricated. The capacitance of MIM-ITO structure (1365.5 pF) was measured to be much larger than MIM structure (442 pF) by two folds. The ITO interlayer enhances the ‘edge effect’ and results in non-stoichiometric Si2O3 phase formation in Si-oxide film. Si2O3 tetrahedrons present strong spontaneous dipoles, which result in an additional net polarization in the Si-oxide film under an applied electric field. With TEM images, (222)-preferred ITO crystalline phase was observed at the Si-oxide/ITO interface and served as the growth seed layer for Si2O3-contained Si-oxide film.

Original languageEnglish
Article number335101
JournalJournal of Physics D: Applied Physics
Issue number33
StatePublished - 17 Aug 2023


  • capacitance
  • dielectric constant
  • indium-tin-oxide
  • interlayer
  • silicon oxide
  • sputtering


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