Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides

Ming Xun Jiang; Sang Ren Yang; I. Yu Tsao; Bayu Satriya Wardhana; Shih Feng Hsueh; Jason Shian Ching Jang; Cheng Lun Hsin; Sheng Wei Lee

doi:10.3390/nano14060494

Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides

Ming Xun Jiang, Sang Ren Yang, I. Yu Tsao, Bayu Satriya Wardhana, Shih Feng Hsueh, Jason Shian Ching Jang, Cheng Lun Hsin, Sheng Wei Lee

Research output: Contribution to journal › Article › peer-review

Abstract

This study introduces Sn-substituted higher manganese silicides (MnSi_1.75, HMS) synthesized via an arc-melting process followed by spark plasma sintering (SPS). The influences of Sn concentrations on the thermoelectric performance of Mn(Si_1−xSn_x)_1.75 (x = 0, 0.001, 0.005, 0.01, 0.015) are systematically investigated. Our findings reveal that metallic Sn precipitates within the Mn(Si_1−xSn_x)_1.75 matrix at x ≥ 0.005, with a determined solubility limit of approximately x = 0.001. In addition, substituting Si with Sn effectively reduces the lattice thermal conductivity of HMS by introducing point defect scattering. In contrast to the undoped HMS, the lattice thermal conductivity decreases to a minimum value of 2.0 W/mK at 750 K for the Mn(Si_0.999Sn_0.001)_1.75 sample, marking a substantial 47.4% reduction. Consequently, a figure of merit (ZT) value of ~0.31 is attained at 750 K. This considerable enhancement in ZT is primarily attributed to the suppressed lattice thermal conductivity resulting from Sn substitution.

Original language	English
Article number	494
Journal	Nanomaterials
Volume	14
Issue number	6
DOIs	https://doi.org/10.3390/nano14060494
State	Published - Mar 2024

Keywords

figure of merit
higher manganese silicide
spark plasma sintering
thermal conductivity
thermoelectric

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title = "Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides",

abstract = "This study introduces Sn-substituted higher manganese silicides (MnSi1.75, HMS) synthesized via an arc-melting process followed by spark plasma sintering (SPS). The influences of Sn concentrations on the thermoelectric performance of Mn(Si1−xSnx)1.75 (x = 0, 0.001, 0.005, 0.01, 0.015) are systematically investigated. Our findings reveal that metallic Sn precipitates within the Mn(Si1−xSnx)1.75 matrix at x ≥ 0.005, with a determined solubility limit of approximately x = 0.001. In addition, substituting Si with Sn effectively reduces the lattice thermal conductivity of HMS by introducing point defect scattering. In contrast to the undoped HMS, the lattice thermal conductivity decreases to a minimum value of 2.0 W/mK at 750 K for the Mn(Si0.999Sn0.001)1.75 sample, marking a substantial 47.4% reduction. Consequently, a figure of merit (ZT) value of ~0.31 is attained at 750 K. This considerable enhancement in ZT is primarily attributed to the suppressed lattice thermal conductivity resulting from Sn substitution.",

keywords = "figure of merit, higher manganese silicide, spark plasma sintering, thermal conductivity, thermoelectric",

author = "Jiang, {Ming Xun} and Yang, {Sang Ren} and Tsao, {I. Yu} and Wardhana, {Bayu Satriya} and Hsueh, {Shih Feng} and Jang, {Jason Shian Ching} and Hsin, {Cheng Lun} and Lee, {Sheng Wei}",

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doi = "10.3390/nano14060494",

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T1 - Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides

AU - Jiang, Ming Xun

AU - Yang, Sang Ren

AU - Tsao, I. Yu

AU - Wardhana, Bayu Satriya

AU - Hsueh, Shih Feng

AU - Jang, Jason Shian Ching

AU - Hsin, Cheng Lun

AU - Lee, Sheng Wei

PY - 2024/3

Y1 - 2024/3

N2 - This study introduces Sn-substituted higher manganese silicides (MnSi1.75, HMS) synthesized via an arc-melting process followed by spark plasma sintering (SPS). The influences of Sn concentrations on the thermoelectric performance of Mn(Si1−xSnx)1.75 (x = 0, 0.001, 0.005, 0.01, 0.015) are systematically investigated. Our findings reveal that metallic Sn precipitates within the Mn(Si1−xSnx)1.75 matrix at x ≥ 0.005, with a determined solubility limit of approximately x = 0.001. In addition, substituting Si with Sn effectively reduces the lattice thermal conductivity of HMS by introducing point defect scattering. In contrast to the undoped HMS, the lattice thermal conductivity decreases to a minimum value of 2.0 W/mK at 750 K for the Mn(Si0.999Sn0.001)1.75 sample, marking a substantial 47.4% reduction. Consequently, a figure of merit (ZT) value of ~0.31 is attained at 750 K. This considerable enhancement in ZT is primarily attributed to the suppressed lattice thermal conductivity resulting from Sn substitution.

AB - This study introduces Sn-substituted higher manganese silicides (MnSi1.75, HMS) synthesized via an arc-melting process followed by spark plasma sintering (SPS). The influences of Sn concentrations on the thermoelectric performance of Mn(Si1−xSnx)1.75 (x = 0, 0.001, 0.005, 0.01, 0.015) are systematically investigated. Our findings reveal that metallic Sn precipitates within the Mn(Si1−xSnx)1.75 matrix at x ≥ 0.005, with a determined solubility limit of approximately x = 0.001. In addition, substituting Si with Sn effectively reduces the lattice thermal conductivity of HMS by introducing point defect scattering. In contrast to the undoped HMS, the lattice thermal conductivity decreases to a minimum value of 2.0 W/mK at 750 K for the Mn(Si0.999Sn0.001)1.75 sample, marking a substantial 47.4% reduction. Consequently, a figure of merit (ZT) value of ~0.31 is attained at 750 K. This considerable enhancement in ZT is primarily attributed to the suppressed lattice thermal conductivity resulting from Sn substitution.

KW - figure of merit

KW - higher manganese silicide

KW - spark plasma sintering

KW - thermal conductivity

KW - thermoelectric

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U2 - 10.3390/nano14060494

DO - 10.3390/nano14060494

M3 - 期刊論文

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VL - 14

JO - Nanomaterials

JF - Nanomaterials

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ER -

Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides

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