Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer

Wei Sheng Liu; David M.T. Kuo; Jen Inn Chyi; Wen Yen Chen; Hsing Szu Chang; Tzu Min Hsu

doi:10.1063/1.2405872

Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer

Wei Sheng Liu, David M.T. Kuo, Jen Inn Chyi, Wen Yen Chen, Hsing Szu Chang, Tzu Min Hsu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

An InGaAsSb overgrown layer, i.e., strain-reducing layer (SRL), is adopted to increase the emission intensity of InAs quantum dots (QDs) and extend the emission wavelength to as long as 1.42 μm. InAs QDs capped with InGaAsSb SRL also exhibit a thermal activation energy of 534 meV, which is much higher than that of InAs QDs with an InGaAs SRL. The increase in luminescence efficiency and thermal stability is attributed to the improved carrier confinement of the GaAsInAsInGaAsSb heterostructure.

Original language	English
Article number	243103
Journal	Applied Physics Letters
Volume	89
Issue number	24
DOIs	https://doi.org/10.1063/1.2405872
State	Published - 2006

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@article{5918416e77924675a29f657a44d0932f,

title = "Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer",

abstract = "An InGaAsSb overgrown layer, i.e., strain-reducing layer (SRL), is adopted to increase the emission intensity of InAs quantum dots (QDs) and extend the emission wavelength to as long as 1.42 μm. InAs QDs capped with InGaAsSb SRL also exhibit a thermal activation energy of 534 meV, which is much higher than that of InAs QDs with an InGaAs SRL. The increase in luminescence efficiency and thermal stability is attributed to the improved carrier confinement of the GaAsInAsInGaAsSb heterostructure.",

author = "Liu, {Wei Sheng} and Kuo, {David M.T.} and Chyi, {Jen Inn} and Chen, {Wen Yen} and Chang, {Hsing Szu} and Hsu, {Tzu Min}",

note = "Funding Information: This work was partially supported by the National Science Council of the Republic of China under Contract Nos. NSC94-2215-E-008-004 and 94-2752-E-008-001-PAE and the Center for Nano Science and Technology, University System of Taiwan. ",

year = "2006",

doi = "10.1063/1.2405872",

language = "???core.languages.en_GB???",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "24",

}

TY - JOUR

T1 - Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer

AU - Liu, Wei Sheng

AU - Kuo, David M.T.

AU - Chyi, Jen Inn

AU - Chen, Wen Yen

AU - Chang, Hsing Szu

AU - Hsu, Tzu Min

N1 - Funding Information: This work was partially supported by the National Science Council of the Republic of China under Contract Nos. NSC94-2215-E-008-004 and 94-2752-E-008-001-PAE and the Center for Nano Science and Technology, University System of Taiwan.

PY - 2006

Y1 - 2006

N2 - An InGaAsSb overgrown layer, i.e., strain-reducing layer (SRL), is adopted to increase the emission intensity of InAs quantum dots (QDs) and extend the emission wavelength to as long as 1.42 μm. InAs QDs capped with InGaAsSb SRL also exhibit a thermal activation energy of 534 meV, which is much higher than that of InAs QDs with an InGaAs SRL. The increase in luminescence efficiency and thermal stability is attributed to the improved carrier confinement of the GaAsInAsInGaAsSb heterostructure.

AB - An InGaAsSb overgrown layer, i.e., strain-reducing layer (SRL), is adopted to increase the emission intensity of InAs quantum dots (QDs) and extend the emission wavelength to as long as 1.42 μm. InAs QDs capped with InGaAsSb SRL also exhibit a thermal activation energy of 534 meV, which is much higher than that of InAs QDs with an InGaAs SRL. The increase in luminescence efficiency and thermal stability is attributed to the improved carrier confinement of the GaAsInAsInGaAsSb heterostructure.

UR - http://www.scopus.com/inward/record.url?scp=33845729941&partnerID=8YFLogxK

U2 - 10.1063/1.2405872

DO - 10.1063/1.2405872

M3 - 期刊論文

AN - SCOPUS:33845729941

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 243103

ER -

Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer

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