Enhanced performance of solution-processed TESPE-ADT thin-film transistors

Liang Hsiang Chen; Tarng Shiang Hu; Peng Yi Huang; Choongik Kim; Ching Hao Yang; Juin Jie Wang; Jing Yi Yan; Jia Chong Ho; Cheng Chung Lee; Ming Chou Chen

doi:10.1002/cphc.201300317

Enhanced performance of solution-processed TESPE-ADT thin-film transistors

Liang Hsiang Chen, Tarng Shiang Hu, Peng Yi Huang, Choongik Kim, Ching Hao Yang, Juin Jie Wang, Jing Yi Yan, Jia Chong Ho, Cheng Chung Lee, Ming Chou Chen

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A solution-processed anthradithiophene derivative, 5,11-bis(4- triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT), is studied for use as the semiconducting material in thin-film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin-coating and drop-casting) on various gate dielectrics as well as additional post-treatment are employed on thin films of TESPE-ADT, and p-channel OTFT transport with hole mobilities as high as ∼0.12 cm ² V^-1 s^-1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.

Original language	English
Pages (from-to)	2772-2776
Number of pages	5
Journal	ChemPhysChem
Volume	14
Issue number	12
DOIs	https://doi.org/10.1002/cphc.201300317
State	Published - 26 Aug 2013

Keywords

anthradithiophene
electrochemistry
organic semiconductors
organic thin-film transistors
solution processes

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10.1002/cphc.201300317

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title = "Enhanced performance of solution-processed TESPE-ADT thin-film transistors",

abstract = "A solution-processed anthradithiophene derivative, 5,11-bis(4- triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT), is studied for use as the semiconducting material in thin-film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin-coating and drop-casting) on various gate dielectrics as well as additional post-treatment are employed on thin films of TESPE-ADT, and p-channel OTFT transport with hole mobilities as high as ∼0.12 cm 2 V-1 s-1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.",

keywords = "anthradithiophene, electrochemistry, organic semiconductors, organic thin-film transistors, solution processes",

author = "Chen, {Liang Hsiang} and Hu, {Tarng Shiang} and Huang, {Peng Yi} and Choongik Kim and Yang, {Ching Hao} and Wang, {Juin Jie} and Yan, {Jing Yi} and Ho, {Jia Chong} and Lee, {Cheng Chung} and Chen, {Ming Chou}",

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doi = "10.1002/cphc.201300317",

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AU - Chen, Liang Hsiang

AU - Hu, Tarng Shiang

AU - Huang, Peng Yi

AU - Kim, Choongik

AU - Yang, Ching Hao

AU - Wang, Juin Jie

AU - Yan, Jing Yi

AU - Ho, Jia Chong

AU - Lee, Cheng Chung

AU - Chen, Ming Chou

PY - 2013/8/26

Y1 - 2013/8/26

N2 - A solution-processed anthradithiophene derivative, 5,11-bis(4- triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT), is studied for use as the semiconducting material in thin-film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin-coating and drop-casting) on various gate dielectrics as well as additional post-treatment are employed on thin films of TESPE-ADT, and p-channel OTFT transport with hole mobilities as high as ∼0.12 cm 2 V-1 s-1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.

AB - A solution-processed anthradithiophene derivative, 5,11-bis(4- triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT), is studied for use as the semiconducting material in thin-film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin-coating and drop-casting) on various gate dielectrics as well as additional post-treatment are employed on thin films of TESPE-ADT, and p-channel OTFT transport with hole mobilities as high as ∼0.12 cm 2 V-1 s-1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.

KW - anthradithiophene

KW - electrochemistry

KW - organic semiconductors

KW - organic thin-film transistors

KW - solution processes

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U2 - 10.1002/cphc.201300317

DO - 10.1002/cphc.201300317

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SN - 1439-4235

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SP - 2772

EP - 2776

JO - ChemPhysChem

JF - ChemPhysChem

IS - 12

ER -

Enhanced performance of solution-processed TESPE-ADT thin-film transistors

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Keywords

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