Enhanced performance of solution-processed TESPE-ADT thin-film transistors

Liang Hsiang Chen, Tarng Shiang Hu, Peng Yi Huang, Choongik Kim, Ching Hao Yang, Juin Jie Wang, Jing Yi Yan, Jia Chong Ho, Cheng Chung Lee, Ming Chou Chen

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


A solution-processed anthradithiophene derivative, 5,11-bis(4- triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT), is studied for use as the semiconducting material in thin-film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin-coating and drop-casting) on various gate dielectrics as well as additional post-treatment are employed on thin films of TESPE-ADT, and p-channel OTFT transport with hole mobilities as high as ∼0.12 cm 2 V-1 s-1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.

Original languageEnglish
Pages (from-to)2772-2776
Number of pages5
Issue number12
StatePublished - 26 Aug 2013


  • anthradithiophene
  • electrochemistry
  • organic semiconductors
  • organic thin-film transistors
  • solution processes


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