Enhanced growth of low-resistivity titanium silicides on epitaxial Si 0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

W. W. Wu; C. W. Wang; K. N. Chen; S. L. Cheng; S. W. Lee

doi:10.1016/j.tsf.2010.04.090

Enhanced growth of low-resistivity titanium silicides on epitaxial Si _0.7Ge_0.3 on (001)Si with a sacrificial amorphous Si interlayer

W. W. Wu, C. W. Wang, K. N. Chen, S. L. Cheng, S. W. Lee

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si_0.7Ge_0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi₂ on Si_0.7Ge_0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

Original language	English
Pages (from-to)	7279-7282
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	24
DOIs	https://doi.org/10.1016/j.tsf.2010.04.090
State	Published - 1 Oct 2010

Keywords

Epitaxial growth
Low-resistivity silicide
Nano thin film
Si-Ge alloys
TiSi

Access to Document

10.1016/j.tsf.2010.04.090

Cite this

@article{b15d068b682b457fbc614b565cab468b,

title = "Enhanced growth of low-resistivity titanium silicides on epitaxial Si 0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer",

abstract = "Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.",

keywords = "Epitaxial growth, Low-resistivity silicide, Nano thin film, Si-Ge alloys, TiSi",

author = "Wu, {W. W.} and Wang, {C. W.} and Chen, {K. N.} and Cheng, {S. L.} and Lee, {S. W.}",

note = "Funding Information: The research was supported by the Republic of China National Science Council through grant Nos. NSC 97-2218-E-009-027-MY3 and 97-2120-M-009-006 .",

year = "2010",

month = oct,

day = "1",

doi = "10.1016/j.tsf.2010.04.090",

language = "???core.languages.en_GB???",

volume = "518",

pages = "7279--7282",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "24",

}

TY - JOUR

T1 - Enhanced growth of low-resistivity titanium silicides on epitaxial Si 0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

AU - Wu, W. W.

AU - Wang, C. W.

AU - Chen, K. N.

AU - Cheng, S. L.

AU - Lee, S. W.

N1 - Funding Information: The research was supported by the Republic of China National Science Council through grant Nos. NSC 97-2218-E-009-027-MY3 and 97-2120-M-009-006 .

PY - 2010/10/1

Y1 - 2010/10/1

N2 - Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

AB - Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

KW - Epitaxial growth

KW - Low-resistivity silicide

KW - Nano thin film

KW - Si-Ge alloys

KW - TiSi

UR - http://www.scopus.com/inward/record.url?scp=77956882693&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2010.04.090

DO - 10.1016/j.tsf.2010.04.090

M3 - 期刊論文

AN - SCOPUS:77956882693

SN - 0040-6090

VL - 518

SP - 7279

EP - 7282

JO - Thin Solid Films

JF - Thin Solid Films

IS - 24