Abstract
Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.
Original language | English |
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Pages (from-to) | 7279-7282 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 518 |
Issue number | 24 |
DOIs | |
State | Published - 1 Oct 2010 |
Keywords
- Epitaxial growth
- Low-resistivity silicide
- Nano thin film
- Si-Ge alloys
- TiSi