Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

W. W. Wu, S. L. Cheng, S. W. Lee, L. J. Chen

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer was achieved. The selection of the thickness ratio of Ni and a-Si was such that the a-Si was completely consumed in forming NiSi. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity NiSi on epitaxial Si0.7Ge0.3 grown by molecular beam epitaxy.

Original languageEnglish
Pages (from-to)2147-2150
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number5
StatePublished - Sep 2003

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