Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 with a sacrificial amorphous Si interlayer

W. W. Wu; T. F. Chiang; S. L. Cheng; S. W. Lee; L. J. Chen; Y. H. Peng; H. H. Cheng

doi:10.1063/1.1494103

Enhanced growth of CoSi₂ on epitaxial Si_0.7Ge _0.3 with a sacrificial amorphous Si interlayer

W. W. Wu, T. F. Chiang, S. L. Cheng, S. W. Lee, L. J. Chen, Y. H. Peng, H. H. Cheng

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Enhanced growth of CoSi₂ on epitaxial Si_0.7Ge _0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi₂ on Si_0.7Ge _0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

Original language	English
Pages (from-to)	820-822
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	5
DOIs	https://doi.org/10.1063/1.1494103
State	Published - 29 Jul 2002

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abstract = "Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi2 on Si0.7Ge 0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.",

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AU - Wu, W. W.

AU - Chiang, T. F.

AU - Cheng, S. L.

AU - Lee, S. W.

AU - Chen, L. J.

AU - Peng, Y. H.

AU - Cheng, H. H.

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N2 - Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi2 on Si0.7Ge 0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

AB - Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi2 on Si0.7Ge 0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices.

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Enhanced growth of CoSi2 on epitaxial Si0.7Ge 0.3 with a sacrificial amorphous Si interlayer

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Enhanced growth of CoSi₂ on epitaxial Si_0.7Ge _0.3 with a sacrificial amorphous Si interlayer