Enhanced Electrical Properties of AlInN/AlN/GaN Heterostructure using AlxGa1-xN/AlyGa1-yN superlattice

Yu Chih Chen, Indraneel Sanyal, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, the role of an AlxGa1-xN/AlyGa1-yN superlattice (SL) layer in the buffer layer on the dislocation density and transport property of AlInN/AIN/GaN heterostructures grown on 150 mm silicon (111) substrate is investigated. It is found that the threading dislocation density in the GaN buffer strongly depends on the composition, thickness and the position of the SL layer. Electron mobility of 1,940 cm2/V-s with two dimensional electron gas density of 1.45×1013cm-2, resulting in a sheet resistance of 221 ohm/□, is achieved by using 10 pairs of Al0.2Ga0.8N/Al0.8Ga0.2N SL placed just above the thin AIN nucleation layer on Si substrate.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
DOIs
StatePublished - May 2019
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: 19 May 201923 May 2019

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
Country/TerritoryJapan
CityNara
Period19/05/1923/05/19

Keywords

  • AlGaN
  • AllnN
  • Dislocation
  • GaN
  • Si
  • Superlattice

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