Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates

Ming Ta Yang, Yi Jen Chan, Jia Lin Shieh, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


An alternative In0.3Ga0.7As/In0.29Al0.71As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density. This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.

Original languageEnglish
Pages (from-to)410-412
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - Aug 1996


Dive into the research topics of 'Enhanced device performance by unstrained In<sub>0.3</sub>Ga<sub>0.7</sub>As/In<sub>0.29</sub>Al<sub>0.71</sub>As doped-channel FET on GaAs substrates'. Together they form a unique fingerprint.

Cite this