Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates

Ming Ta Yang, Yi Jen Chan, Jia Lin Shieh, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

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Abstract

An alternative In0.3Ga0.7As/In0.29Al0.71As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density. This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.

Original languageEnglish
Pages (from-to)410-412
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number8
DOIs
StatePublished - Aug 1996

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