Energy band diagrams for the photo-electrochemical dissolution of n-Si(1 0 0) in HF

Wern Dare Jehng; Jing Chie Lin; Chien Ming Lai; Sheng Long Lee

doi:10.1016/j.matchemphys.2004.12.018

Energy band diagrams for the photo-electrochemical dissolution of n-Si(1 0 0) in HF

Wern Dare Jehng, Jing Chie Lin, Chien Ming Lai, Sheng Long Lee

Graduate Institute of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A technique in combination of theoretical and experimental methods was used to establish the energy band diagrams for the photo-electrochemical dissolution of n-Si(1 0 0) in various HF solutions. Based on theoretical calculation in the band gap of silicon and experimental measurements in both open circuit potential (OCP) and flatband voltage (V_fb) of the n-Si/HF, we successfully established the energy band diagrams, and estimated the activation energy (E_act) for the photo-electrochemical reaction of the system. The E_act data were advantageous to elucidate the reaction kinetics. The dissolution rate of silicon increased to a maximum with increasing the HF concentration from 0.5 to 2.0 M; it decreased with further increasing in HF concentrations. This concentration effect could be interpreted in terms of energy band diagrams and the E_act data.

Original language	English
Pages (from-to)	513-517
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	91
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2004.12.018
State	Published - 15 Jun 2005

Keywords

Energy band diagram
Etching
Photo-electrochemical techniques
Silicon

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10.1016/j.matchemphys.2004.12.018

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title = "Energy band diagrams for the photo-electrochemical dissolution of n-Si(1 0 0) in HF",

abstract = "A technique in combination of theoretical and experimental methods was used to establish the energy band diagrams for the photo-electrochemical dissolution of n-Si(1 0 0) in various HF solutions. Based on theoretical calculation in the band gap of silicon and experimental measurements in both open circuit potential (OCP) and flatband voltage (Vfb) of the n-Si/HF, we successfully established the energy band diagrams, and estimated the activation energy (Eact) for the photo-electrochemical reaction of the system. The Eact data were advantageous to elucidate the reaction kinetics. The dissolution rate of silicon increased to a maximum with increasing the HF concentration from 0.5 to 2.0 M; it decreased with further increasing in HF concentrations. This concentration effect could be interpreted in terms of energy band diagrams and the Eact data.",

keywords = "Energy band diagram, Etching, Photo-electrochemical techniques, Silicon",

author = "Jehng, {Wern Dare} and Lin, {Jing Chie} and Lai, {Chien Ming} and Lee, {Sheng Long}",

note = "Funding Information: The financial support of this work by the National Science Council of Republic of China under contract NSC-92-2216-E-008-008 is gratefully acknowledged.",

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T1 - Energy band diagrams for the photo-electrochemical dissolution of n-Si(1 0 0) in HF

AU - Jehng, Wern Dare

AU - Lin, Jing Chie

AU - Lai, Chien Ming

AU - Lee, Sheng Long

N1 - Funding Information: The financial support of this work by the National Science Council of Republic of China under contract NSC-92-2216-E-008-008 is gratefully acknowledged.

PY - 2005/6/15

Y1 - 2005/6/15

N2 - A technique in combination of theoretical and experimental methods was used to establish the energy band diagrams for the photo-electrochemical dissolution of n-Si(1 0 0) in various HF solutions. Based on theoretical calculation in the band gap of silicon and experimental measurements in both open circuit potential (OCP) and flatband voltage (Vfb) of the n-Si/HF, we successfully established the energy band diagrams, and estimated the activation energy (Eact) for the photo-electrochemical reaction of the system. The Eact data were advantageous to elucidate the reaction kinetics. The dissolution rate of silicon increased to a maximum with increasing the HF concentration from 0.5 to 2.0 M; it decreased with further increasing in HF concentrations. This concentration effect could be interpreted in terms of energy band diagrams and the Eact data.

AB - A technique in combination of theoretical and experimental methods was used to establish the energy band diagrams for the photo-electrochemical dissolution of n-Si(1 0 0) in various HF solutions. Based on theoretical calculation in the band gap of silicon and experimental measurements in both open circuit potential (OCP) and flatband voltage (Vfb) of the n-Si/HF, we successfully established the energy band diagrams, and estimated the activation energy (Eact) for the photo-electrochemical reaction of the system. The Eact data were advantageous to elucidate the reaction kinetics. The dissolution rate of silicon increased to a maximum with increasing the HF concentration from 0.5 to 2.0 M; it decreased with further increasing in HF concentrations. This concentration effect could be interpreted in terms of energy band diagrams and the Eact data.

KW - Energy band diagram

KW - Etching

KW - Photo-electrochemical techniques

KW - Silicon

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U2 - 10.1016/j.matchemphys.2004.12.018

DO - 10.1016/j.matchemphys.2004.12.018

M3 - 期刊論文

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SN - 0254-0584

VL - 91

SP - 513

EP - 517

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Energy band diagrams for the photo-electrochemical dissolution of n-Si(1 0 0) in HF

Abstract

Keywords

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