Emulator of Gene Mutation: Interfering True Random Number Generators using Resistive-gate Non-volatile-memories

E. Ray Hsieh, Po Hsiung Huang, Min Lun Miu, Shao Yi Huang, Shao Mian Lu, Ruei Yang Lyu

Research output: Contribution to journalArticlepeer-review

Abstract

We present the interfering True-random-number-generators (TRNG) composed of 2 parallel resistive-gate non-volatile memory cells. Both cells store closer but different resistance states. 2 cells output current flows separately, which are received concurrently by a current-reference sense amplifier (SA). The SA compares difference of received flows and then continues outputting the same bits if difference of current-flows remains stable. However, if randomness happens, levels of current flows from the cells are interlaced; the SA will output a flipped bit, which can be in analogy to gene mutation. So, we emulate mutation by the interfering TRNGs and propose an algorithm to implement emulator of mutation. The TRNGs are also qualified by cryptographic tests, including the Hamming distance, Hamming weight, auto-correlation, and tests of National Institute of Standards and Technologies.

Original languageEnglish
Pages (from-to)1
Number of pages1
JournalIEEE Electron Device Letters
DOIs
StateAccepted/In press - 2022

Keywords

  • Electrodes
  • Evolution (biology)
  • Gene Mutation
  • Generators
  • Logic gates
  • Nonvolatile memory
  • Resistance
  • Resistive-gate Non-volatile-memory
  • RNA
  • True Random Number Generator

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