Emission intensity improvement of InGaN ultraviolet light-emitting diodes grown on wet-etched sapphire substrates

Chang Chi Pan, Chi Hsun Hsieh, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 Quantum Electronics and Laser Science Conference, QELS
DOIs	https://doi.org/10.1109/QELS.2007.4431326
State	Published - 2007
Event	2007 Quantum Electronics and Laser Science Conference, QELS - Baltimore, MD, United States Duration: 6 May 2007 → 11 May 2007

Name	Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Conference	2007 Quantum Electronics and Laser Science Conference, QELS
Country/Territory	United States
City	Baltimore, MD
Period	6/05/07 → 11/05/07

Access to Document

Pan, C. C., Hsieh, C. H., & Chyi, J. I. (2007). Emission intensity improvement of InGaN ultraviolet light-emitting diodes grown on wet-etched sapphire substrates. In 2007 Quantum Electronics and Laser Science Conference, QELS Article 4431326 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). https://doi.org/10.1109/QELS.2007.4431326

@inproceedings{4560544f6d284b239433e5fa9d19627c,

title = "Emission intensity improvement of InGaN ultraviolet light-emitting diodes grown on wet-etched sapphire substrates",

author = "Pan, {Chang Chi} and Hsieh, {Chi Hsun} and Chyi, {Jen Inn}",

year = "2007",

doi = "10.1109/QELS.2007.4431326",

language = "???core.languages.en_GB???",

isbn = "1557528349",

series = "Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series",

booktitle = "2007 Quantum Electronics and Laser Science Conference, QELS",

note = "2007 Quantum Electronics and Laser Science Conference, QELS ; Conference date: 06-05-2007 Through 11-05-2007",

}

Pan, CC, Hsieh, CH & Chyi, JI 2007, Emission intensity improvement of InGaN ultraviolet light-emitting diodes grown on wet-etched sapphire substrates. in 2007 Quantum Electronics and Laser Science Conference, QELS., 4431326, Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 2007 Quantum Electronics and Laser Science Conference, QELS, Baltimore, MD, United States, 6/05/07. https://doi.org/10.1109/QELS.2007.4431326

Emission intensity improvement of InGaN ultraviolet light-emitting diodes grown on wet-etched sapphire substrates. / Pan, Chang Chi; Hsieh, Chi Hsun; Chyi, Jen Inn.
2007 Quantum Electronics and Laser Science Conference, QELS. 2007. 4431326 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Emission intensity improvement of InGaN ultraviolet light-emitting diodes grown on wet-etched sapphire substrates

AU - Pan, Chang Chi

AU - Hsieh, Chi Hsun

AU - Chyi, Jen Inn

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=51549087822&partnerID=8YFLogxK

U2 - 10.1109/QELS.2007.4431326

DO - 10.1109/QELS.2007.4431326

M3 - 會議論文篇章

AN - SCOPUS:51549087822

SN - 1557528349

SN - 9781557528346

T3 - Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

BT - 2007 Quantum Electronics and Laser Science Conference, QELS

T2 - 2007 Quantum Electronics and Laser Science Conference, QELS

Y2 - 6 May 2007 through 11 May 2007

ER -