Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells

T. M. Hsu, C. Y. Lai, W. H. Chang, C. C. Pan, C. C. Chuo, J. I. Chyi

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Abstract

The polarization field in InGaN/AlInGaN quantum wells (QW) grown on GaN was investigated. The AlInGaN barrier was lattice-matched to the GaN substrate. A paraboliclike energy shift, an intensity minimum and an 180° phase change at the flat-band voltage was revealed by the bias-dependent spectra due to the quantum-confined Stark effect. The results show that the polarization field in the InGaN/AlInGaN QW is reduced significantly and is attributed to the contribution of spontaneous polarization in the quaternary barrier which compensates the piezoelectric polarization in the InGaN QWs.

Original languageEnglish
Pages (from-to)1114-1116
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number7
DOIs
StatePublished - 16 Feb 2004

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