Abstract
The polarization field in InGaN/AlInGaN quantum wells (QW) grown on GaN was investigated. The AlInGaN barrier was lattice-matched to the GaN substrate. A paraboliclike energy shift, an intensity minimum and an 180° phase change at the flat-band voltage was revealed by the bias-dependent spectra due to the quantum-confined Stark effect. The results show that the polarization field in the InGaN/AlInGaN QW is reduced significantly and is attributed to the contribution of spontaneous polarization in the quaternary barrier which compensates the piezoelectric polarization in the InGaN QWs.
Original language | English |
---|---|
Pages (from-to) | 1114-1116 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 7 |
DOIs | |
State | Published - 16 Feb 2004 |