Abstract
Electroreflectance spectroscopy was used to study the effect of Inx Ga1-x As capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the Inx Ga1-x As capping layer were well resolved. The energy shifts in the Inx Ga1-x As capping layer show a different trend as compared to a series of referent Inx Ga1-x As quantum wells. These results support the concept of strain-driven alloy decomposition during the Inx Ga1-x As layer overgrowth.
Original language | English |
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Article number | 131917 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 13 |
DOIs | |
State | Published - 28 Mar 2005 |