Electroreflectance studies of InAs quantum dots with Inx Ga1-x As capping layer grown by metalorganic chemical vapor deposition

W. H. Chang, Hsiang Yu Chen, H. S. Chang, W. Y. Chen, T. M. Hsu, T. P. Hsieh, J. I. Chyi, N. T. Yeh

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21 Scopus citations

Abstract

Electroreflectance spectroscopy was used to study the effect of Inx Ga1-x As capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the Inx Ga1-x As capping layer were well resolved. The energy shifts in the Inx Ga1-x As capping layer show a different trend as compared to a series of referent Inx Ga1-x As quantum wells. These results support the concept of strain-driven alloy decomposition during the Inx Ga1-x As layer overgrowth.

Original languageEnglish
Article number131917
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number13
DOIs
StatePublished - 28 Mar 2005

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