Electronic Structure and Infrared Light Emission in Dislocation-Engineered Silicon

Cheng Lun Hsin, Hsu Shen Teng, Hsiang Yuan Lin, Tzu Hsuan Cheng, Chao Chia Cheng, Po Liang Liu

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


One of the perspectives of the Si-based technology is the optical interconnect for data transmission and applications in optoelectronic integrated circuit. In this report, the engineered dislocation network was proposed, and the atomic structure of the dislocation array was revealed by high-resolution transmission electron microscope and scanning tunneling microscope. The photoluminescence emission is strong and compatible with intrinsic Si characteristic peak, making it possible as light emitters in silicon. The analysis of dislocation array-induced scanning tunneling spectroscopy identified the presence of defect levels under the conduction band, compared with the occupied and unoccupied Kohn-Sham orbitals in the forbidden gap of Si derived from first-principles theoretical models. This study demonstrated the possibility of dislocation-induced optical transition from a theoretical and experimental perspective, which will be essential in the development of Si-based optoelectronic integrated circuit.

Original languageEnglish
Article number7056478
Pages (from-to)399-403
Number of pages5
JournalIEEE Transactions on Nanotechnology
Issue number3
StatePublished - 1 May 2015


  • Density of state
  • dislocation array
  • first-principles calculations
  • network
  • photoluminescence
  • tunneling current


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