GaInP/GaAs/GaInP double heterojunction bipolar transistors have been fabricated tor the study of electron saturation velocity (vsat) in GaInP. The necessary composite design at the base-collector junction, which effectively reduces the conduction band spike and avoids the premature Kirk effect, enables us to use the Kirk effect to study vsat. The deduced electron saturation velocity in GaInP is ∼ 5 × 106 cm/sec.
|Number of pages||2|
|Journal||Applied Physics Letters|
|State||Published - 4 Sep 2000|