Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor

Yue Ming Hsin; Shih Tzung Hsu; Chen Chung Fan

doi:10.1063/1.1290602

Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor

Yue Ming Hsin, Shih Tzung Hsu, Chen Chung Fan

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Abstract

GaInP/GaAs/GaInP double heterojunction bipolar transistors have been fabricated tor the study of electron saturation velocity (v_sat) in GaInP. The necessary composite design at the base-collector junction, which effectively reduces the conduction band spike and avoids the premature Kirk effect, enables us to use the Kirk effect to study v_sat. The deduced electron saturation velocity in GaInP is ∼ 5 × 10⁶ cm/sec.

Original language	English
Pages (from-to)	1538-1539
Number of pages	2
Journal	Applied Physics Letters
Volume	77
Issue number	10
DOIs	https://doi.org/10.1063/1.1290602
State	Published - 4 Sep 2000

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title = "Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor",

abstract = "GaInP/GaAs/GaInP double heterojunction bipolar transistors have been fabricated tor the study of electron saturation velocity (vsat) in GaInP. The necessary composite design at the base-collector junction, which effectively reduces the conduction band spike and avoids the premature Kirk effect, enables us to use the Kirk effect to study vsat. The deduced electron saturation velocity in GaInP is ∼ 5 × 106 cm/sec.",

author = "Hsin, {Yue Ming} and Hsu, {Shih Tzung} and Fan, {Chen Chung}",

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T1 - Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor

AU - Hsin, Yue Ming

AU - Hsu, Shih Tzung

AU - Fan, Chen Chung

PY - 2000/9/4

Y1 - 2000/9/4

N2 - GaInP/GaAs/GaInP double heterojunction bipolar transistors have been fabricated tor the study of electron saturation velocity (vsat) in GaInP. The necessary composite design at the base-collector junction, which effectively reduces the conduction band spike and avoids the premature Kirk effect, enables us to use the Kirk effect to study vsat. The deduced electron saturation velocity in GaInP is ∼ 5 × 106 cm/sec.

AB - GaInP/GaAs/GaInP double heterojunction bipolar transistors have been fabricated tor the study of electron saturation velocity (vsat) in GaInP. The necessary composite design at the base-collector junction, which effectively reduces the conduction band spike and avoids the premature Kirk effect, enables us to use the Kirk effect to study vsat. The deduced electron saturation velocity in GaInP is ∼ 5 × 106 cm/sec.

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U2 - 10.1063/1.1290602

DO - 10.1063/1.1290602

M3 - 期刊論文

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SN - 0003-6951

VL - 77

SP - 1538

EP - 1539

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor

Abstract

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