Electromigration studies of Cu/carbon nanotube composite interconnects using Blech structure

Yang Chai, Philip C.H. Chan, Yunyi Fu, Y. C. Chuang, C. Y. Liu

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The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 × 106 A/cm2. The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.

Original languageEnglish
Pages (from-to)1001-1003
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - 2008


  • Carbon nanotube (CNT)
  • Composite
  • Electromigration (EM)
  • Interconnect


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